IRHLF7S3214 datasheet, PDF - EEWORLD Datasheet

IRHLF7S3214: DescriptionPower Field-Effect Transistor, 3.3A I(D), 250V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, MODIFIED TO-39, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size1MB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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IRHLF7S3214 Overview

Power Field-Effect Transistor, 3.3A I(D), 250V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, MODIFIED TO-39, 3 PIN

Parameter Name	Attribute value
Objectid	8204663641
Reach Compliance Code	compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	29 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	250 V
Maximum drain current (ID)	3.3 A
Maximum drain-source on-resistance	1 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-205AF
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	13.2 A
Guideline	RH - 300K Rad(Si)
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON

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