MCP6H01/2
1.2 MHz, 16V Op Amps
Features
•
•
•
•
•
•
Input Offset Voltage: ±0.7 mV (typical)
Quiescent Current: 135 µA (typical)
Common Mode Rejection Ratio: 100 dB (typical)
Power Supply Rejection Ratio: 102 dB (typical)
Rail-to-Rail Output
Supply Voltage Range:
- Single-Supply Operation: 3.5V to 16V
- Dual-Supply Operation: ±1.75V to ±8V
Gain Bandwidth Product: 1.2 MHz (typical)
Slew Rate: 0.8V/µs (typical)
Unity Gain Stable
Extended Temperature Range: -40°C to +125°C
No Phase Reversal
Description
Microchip’s MCP6H01/2 family of operational amplifi-
ers (op amps) has a wide supply voltage range of 3.5V
to 16V and rail-to-rail output operation. This family is
unity gain stable and has a gain bandwidth product of
1.2 MHz (typical). These devices operate with a
single-supply voltage as high as 16V, while only
drawing 135 µA/amplifier (typical) of quiescent current.
The MCP6H01/2 family is offered in single
(MCP6H01) and dual (MCP6H02) configurations. All
devices are fully specified in extended temperature
range from -40°C to +125°C.
•
•
•
•
•
Package Types
MCP6H01
SOIC
NC 1
V
IN
– 2
V
IN
+ 3
V
SS
4
8 NC
7 V
DD
6 V
OUT
5 NC
Applications
•
•
•
•
Automotive Power Electronics
Industrial Control Equipment
Battery Powered Systems
Medical Diagnostic Instruments
MCP6H02
SOIC
V
OUTA
1
V
INA
– 2
V
INA
+ 3
V
SS
4
8 V
DD
7 V
OUTB
6 V
INB
–
5 V
INB
+
Design Aids
•
•
•
•
•
•
SPICE Macro Models
FilterLab
®
Software
Mindi
™
Circuit Designer and Simulator
MAPS (Microchip Advanced Part Selector)
Analog Demonstration and Evaluation Boards
Application Notes
MCP6H01
2x3 TDFN
NC 1
V
IN
– 2
V
IN
+ 3
V
SS
4
EP
9
8 NC
7 V
DD
5 NC
MCP6H02
2x3 TDFN
V
OUTA
1
V
INA
– 2
V
SS
4
EP
9
8 V
DD
7 V
OUTB
6 V
INB
–
5 V
INB
+
6 V
OUT
V
INA
+ 3
* Includes Exposed Thermal Pad (EP); see
Table 3-1.
Typical Application
R
1
V
1
V
DD
MCP6H01
V
OUT
R
2
V
REF
V
2
R
1
R
2
Difference Amplifier
©
2010 Microchip Technology Inc.
DS22243B-page 1
MCP6H01/2
NOTES:
DS22243B-page 2
©
2010 Microchip Technology Inc.
MCP6H01/2
1.0
1.1
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
† Notice:
Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
††
See
4.1.2 “Input Voltage Limits”.
V
DD
– V
SS
..........................................................................17V
Current at Input Pins......................................................±2 mA
Analog Inputs (V
IN
+, V
IN
-)††.............V
SS
– 1.0V to V
DD
+ 1.0V
All Other Inputs and Outputs ............V
SS
– 0.3V to V
DD
+ 0.3V
Difference Input Voltage|..........................................V
DD
– V
SS
Output Short-Circuit Current...................................continuous
Current at Output and Supply Pins ..............................±65 mA
Storage Temperature.....................................-65°C to +150°C
Maximum Junction Temperature (T
J
)...........................+150°C
ESD protection on all pins (HBM; MM)...................≥ 2 kV; 200V
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +3.5V to +16V, V
SS
= GND, T
A
= +25°C,
V
CM
= V
DD
/2 - 1.4V, V
OUT
≈
V
DD
/2, V
L
= V
DD
/2 and R
L
= 10 kΩ to V
L
. (Refer to
Figure 1-1).
Parameters
Input Offset
Input Offset Voltage
Input Offset Drift with Temperature
Power Supply Rejection Ratio
Input Bias Current and Impedance
Input Bias Current
I
B
I
B
I
B
Input Offset Current
Common Mode Input Impedance
Differential Input Impedance
Common Mode
Common Mode Input Voltage Range
Common Mode Rejection Ratio
V
CMR
CMRR
V
SS
−
0.3
78
82
84
Open-Loop Gain
DC Open-Loop Gain (Large Signal)
A
OL
95
115
—
dB
0.2V < V
OUT
<(V
DD
-0.2V)
—
93
98
100
V
DD
−
2.3
—
—
—
V
dB
dB
dB
V
CM
= -0.3V to 1.2V,
V
DD
= 3.5V
V
CM
= -0.3V to 2.7V,
V
DD
= 5V
V
CM
= -0.3V to 12.7V,
V
DD
= 15V
I
OS
Z
CM
Z
DIFF
—
—
—
—
—
—
10
600
10
±1
10
13
||6
10
13
||6
—
—
25
—
—
—
pA
pA
nA
pA
Ω||pF
Ω||pF
T
A
= +85°C
T
A
= +125°C
V
OS
ΔV
OS
/ΔT
A
PSRR
-3.5
—
87
±0.7
±2.5
102
+3.5
—
—
mV
µV/°C T
A
= -40°C to +125°C
dB
Sym
Min
Typ
Max
Units
Conditions
©
2010 Microchip Technology Inc.
DS22243B-page 3
MCP6H01/2
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +3.5V to +16V, V
SS
= GND, T
A
= +25°C,
V
CM
= V
DD
/2 - 1.4V, V
OUT
≈
V
DD
/2, V
L
= V
DD
/2 and R
L
= 10 kΩ to V
L
. (Refer to
Figure 1-1).
Parameters
Output
High-Level Output Voltage
V
OH
3.490
4.985
14.970
Low-Level Output Voltage
V
OL
—
—
—
Output Short-Circuit Current
I
SC
—
—
—
Power Supply
Supply Voltage
Quiescent Current per Amplifier
V
DD
I
Q
3.5
±1.75
—
—
—
—
—
125
130
135
16
±8
175
180
185
V
V
µA
µA
µA
Single-supply operation
Dual-supply operation
I
O
= 0, V
DD
= 3.5V
V
CM
= V
DD
/4
I
O
= 0, V
DD
= 5V
V
CM
= V
DD
/4
I
O
= 0, V
DD
= 15V
V
CM
= V
DD
/4
3.495
4.993
14.980
0.005
0.007
0.020
±27
±45
±50
—
—
—
0.010
0.015
0.030
—
—
—
V
V
V
V
V
V
mA
mA
mA
V
DD
= 3.5V
0.5V input overdrive
V
DD
= 5V
0.5V input overdrive
V
DD
= 15V
0.5V input overdrive
V
DD
= 3.5V
0.5 V input overdrive
V
DD
= 5V
0.5 V input overdrive
V
DD
= 15V
0.5 V input overdrive
V
DD
= 3.5V
V
DD
= 5V
V
DD
= 15V
Sym
Min
Typ
Max
Units
Conditions
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +3.5V to +16V, V
SS
= GND,
V
CM
= V
DD
/2 - 1.4V, V
OUT
≈
V
DD
/2, V
L
= V
DD
/2, R
L
= 10 kΩ to V
L
and C
L
= 60 pF. (Refer to
Figure 1-1).
Parameters
AC Response
Gain Bandwidth Product
Phase Margin
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
E
ni
e
ni
i
ni
—
—
—
—
12
35
30
1.9
—
—
—
—
µVp-p
nV/√Hz
nV/√Hz
fA/√Hz
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 10 kHz
f = 1 kHz
GBWP
PM
SR
—
—
—
1.2
57
0.8
—
—
—
MHz
°
V/µs
G = +1V/V
Sym
Min
Typ
Max
Units
Conditions
DS22243B-page 4
©
2010 Microchip Technology Inc.
MCP6H01/2
TEMPERATURE SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +3.5V to +16V and V
SS
= GND.
Parameters
Temperature Ranges
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 8L-2x3 TDFN
Thermal Resistance, 8L-SOIC
θ
JA
θ
JA
—
—
41
149.5
—
—
°C/W
°C/W
T
A
T
A
-40
-65
—
—
+125
+150
°C
°C
Note 1
Sym
Min
Typ
Max
Units
Conditions
Note 1:
The internal junction temperature (T
J
) must not exceed the absolute maximum specification of +150°C.
1.2
Test Circuits
C
F
6.8 pF
R
G
100 kΩ
V
P
V
IN+
MCP6H0X
V
IN–
V
M
R
G
100 kΩ
R
F
100 kΩ
C
F
6.8 pF
V
OUT
R
L
10 kΩ
C
L
60 pF
C
B1
100 nF
R
F
100 kΩ
V
DD
V
DD
/2
The circuit used for most DC and AC tests is shown in
Figure 1-1.
This circuit can independently set V
CM
and
V
OUT
(refer to
Equation 1-1).
Note that V
CM
is not the
circuit’s common mode voltage ((V
P
+ V
M
)/2), and that
V
OST
includes V
OS
plus the effects (on the input offset
error, V
OST
) of temperature, CMRR, PSRR and A
OL
.
EQUATION 1-1:
G
DM
=
R
F
⁄
R
G
V
CM
=
(
V
P
+
V
DD
⁄
2
) ⁄
2
V
OST
=
V
IN–
–
V
IN+
V
OUT
=
(
V
DD
⁄
2
)
+
(
V
P
–
V
M
)
+
V
OST
⋅ (
1 +
G
DM
)
Where:
G
DM
= Differential Mode Gain
V
CM
= Op Amp’s Common Mode
Input Voltage
V
OST
= Op Amp’s Total Input Offset
Voltage
(V/V)
(V)
(mV)
C
B2
1 µF
V
L
FIGURE 1-1:
AC and DC Test Circuit for
Most Specifications.
©
2010 Microchip Technology Inc.
DS22243B-page 5
Embedded System
京公网安备 11010802033920号
EEWORLD
