Silicon Controlled Rectifier, 251.2A I(T)RMS, 160000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209
| Parameter Name | Attribute value |
| Maker | SEMIKRON |
| package instruction | POST/STUD MOUNT, O-MUPM-H3 |
| Reach Compliance Code | unknow |
| Shell connection | ANODE |
| Nominal circuit commutation break time | 120 µs |
| Configuration | SINGLE |
| Critical rise rate of minimum off-state voltage | 200 V/us |
| Maximum DC gate trigger current | 200 mA |
| Maximum DC gate trigger voltage | 3 V |
| Maximum holding current | 250 mA |
| JEDEC-95 code | TO-209 |
| JESD-30 code | O-MUPM-H3 |
| Maximum leakage current | 50 mA |
| On-state non-repetitive peak current | 4300 A |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum on-state current | 160000 A |
| Maximum operating temperature | 130 °C |
| Minimum operating temperature | -40 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | POST/STUD MOUNT |
| Certification status | Not Qualified |
| Maximum rms on-state current | 251.2 A |
| Maximum repetitive peak off-state leakage current | 50000 µA |
| Off-state repetitive peak voltage | 1200 V |
| Repeated peak reverse voltage | 1200 V |
| surface mount | NO |
| Terminal form | HIGH CURRENT CABLE |
| Terminal location | UPPER |
| Trigger device type | SCR |
| Base Number Matches | 1 |
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