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MRF137

Description
transistors RF mosfet RF transistor
Categorysemiconductor    Discrete semiconductor   
File Size72KB,2 Pages
ManufacturerAll Sensors
Environmental Compliance
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MRF137 Overview

transistors RF mosfet RF transistor

MRF137 Parametric

Parameter NameAttribute value
ManufactureAdvanced Semiconductor, Inc.
Product CategoryTransistors RF MOSFET
RoHSYes
PackagingTray
MRF137
RF POWER FIELD-EFFECT TRANSISTOR
DESCRIPTION:
The
ASI MRF137
is a N-Channel
Enhancement MOSFET, Designed for
Wideband Large Signal Output and
Driver Stage Applications up to
400 MHz.
PACKAGE STYLE .380 4L FLG
MAXIMUM RATINGS
I
D
V
DSS
P
DISS
T
J
T
STG
JC
5.0 A
65 V
100 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
1.75 °C/W
1 = DRAIN
2 = GATE
3 & 4 = SOURCE
CHARACTERISTICS
SYMBOL
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
g
fs
C
iss
C
oss
C
rss
NF
G
ps
I
D
= 10 mA
V
DS
= 28 V
V
DS
= 0 V
I
D
= 25 mA
T
C
= 25 °C
TEST CONDITIONS
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 20 V
V
DS
= 10 V
V
DS
= 10 V
V
GS
= 0 V
I
D
= 1.0 A
P
out
= 30 W
f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
65
4.0
1.0
1.0
500
3.0
750
48
45
11
1.5
12
50
16
60
6.0
UNITS
V
mA
A
V
mmhos
I
D
= 500 mA
V
DS
= 28 V
V
DS
= 28 V
V
DD
= 28 V
I
DQ
= 25 mA
V
DD
= 28 V
I
DQ
= 25 mA
pF
f = 150 MHz
f = 150 MHz
dB
dB
%
P
out
= 30 W
f = 150 MHz
VSWR 30:1 @
ALL PHASE ANGLES
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1

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