AS3PD, AS3PG, AS3PJ, AS3PK, AS3PM
www.vishay.com
Vishay General Semiconductor
High Current Density Standard Avalanche
Surface Mount Rectifiers
FEATURES
eSMP
Series
K
®
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Glass passivated pellet chip junction
• Controlled avalanche characteristics
• Low leakage current
Available
1
2
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
E
AS
V
F
at I
F
= 3 A
T
J
max.
Package
Circuit configuration
3.0 A
200 V, 400 V, 600 V, 800 V, 1000 V
70 A
20 mJ
0.90 V
175 °C
TO-277A (SMPC)
Single
MECHANICAL DATA
Case:
TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer,
automotive and telecommunication.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Max. repetitive peak reverse voltage
Max. DC forward current (fig. 1)
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
Non-repetitive avalanche energy
at T
J
= 25 °C
I
AS
= 2.5 A max.
I
AS
= 1.0 A typical
V
RRM
I
F (1)
I
F (2)
I
FSM
E
AS
T
J
, T
STG
SYMBOL
AS3PD
AS3D
200
AS3PG
AS3G
400
AS3PJ
AS3J
600
3.0
2.1
70
20
30
-55 to +175
AS3PK
AS3K
800
AS3PM
AS3M
1000
V
A
A
mJ
°C
UNIT
Operating junction and storage temperature range
Notes
(1)
Mounted on 10 mm x 10 mm pad areas, 1 oz. FR4 PCB
(2)
Free air, mounted on recommended copper pad area
Revision: 22-Mar-18
Document Number: 88837
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
AS3PD, AS3PG, AS3PJ, AS3PK, AS3PM
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
I
F
= 1.5 A
Instantaneous forward voltage
I
F
= 3.0 A
I
F
= 1.5 A
I
F
= 3.0 A
Reverse current
Typical reverse recovery time
Typical junction capacitance per diode
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
rated V
R
T
A
= 25 °C
V
F (1)
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
I
R (2)
t
rr
C
J
SYMBOL
TYP.
0.92
1.00
0.81
0.90
0.28
62
1.2
37
MAX.
-
1.10
-
0.95
10
150
-
-
μA
μs
pF
V
UNIT
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
4.0 V, 1 MHz
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
JA
(1)
R
JM
(2)
AS3PD
AS3PG
AS3PJ
80
5
AS3PK
AS3PM
UNIT
°C/W
Notes
(1)
Free air, mounted on recommended PCB 1 oz. pad area; thermal resistance R
JA
- junction to ambient
(2)
Units mounted on PCB with 10 mm x 10 mm copper pad areas, 1 oz. FR4 PCB; R
JM
- junction to mount
ORDERING INFORMATION
(Example)
PREFERRED P/N
AS3PJ-M3/86A
AS3PJ-M3/87A
AS3PJHM3_A/H
(1)
AS3PJHM3_A/I
(1)
Note
(1)
AEC-Q101 qualified
UNIT WEIGHT (g)
0.10
0.10
0.10
0.10
PREFERRED PACKAGE CODE
86A
87A
H
I
BASE QUANTITY
1500
6500
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Revision: 22-Mar-18
Document Number: 88837
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
AS3PD, AS3PG, AS3PJ, AS3PK, AS3PM
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
3.5
3.0
1000
Instantaneous Reverse Current (μA)
T
M
= 160 °C
T
A
= 175 °C
100
DC Forward Current (A)
2.5
T
A
= 25 °C
2.0
1.5
1.0
0.5
0
0
25
50
75
100
125
150
175
T
M
Measured
at the Cathode Band Terminal
T
A
= 125 °C
10
T
A
= 75 °C
1
T
A
= 25 °C
0.1
0.01
10
20
30
40
50
60
70
80
90
100
Mount Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
4.0
D = 0.5
3.6
D = 0.8
D = 0.3
D = 0.2
D = 0.1
D = 1.0
1000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
100
Average Power Loss (W)
3.2
2.8
2.4
2.0
1.6
T
1.2
0.8
0.4
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
D = t
p
/T
t
p
Junction Capacitance (pF)
10
1
0.1
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics
Fig. 5 - Typical Junction Capacitance
100
100
T
A
= 175 °C
10
T
A
= 125 °C
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
Junction to Ambient
10
1
T
A
= 75 °C
T
A
= 25 °C
0.1
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 22-Mar-18
Document Number: 88837
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
AS3PD, AS3PG, AS3PJ, AS3PK, AS3PM
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
SMPC
(TO-277A)
0.187 (4.75)
0.175 (4.45)
K
0.016 (0.40)
0.006 (0.15)
Vishay General Semiconductor
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
0.087 (2.20)
0.075 (1.90)
0.047 (1.20)
0.039 (1.00)
Mounting Pad Layout
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.268
(6.80)
0.186 (4.72)
MIN.
0.049 (1.24)
0.037 (0.94)
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
Conform to JEDEC
®
TO-277A
0.050 (1.27)
MIN.
0.041
(1.04)
0.055 (1.40)
MIN.
Revision: 22-Mar-18
Document Number: 88837
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Revision: 08-Feb-17
1
Document Number: 91000