DN3765K4-G datasheet, PDF - EEWORLD Datasheet

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DN3765K4-G: DescriptionMOSfet nch depletion-mode vertical dmos fet; CategoryDiscrete semiconductor The transistor; File Size344KB，3 Pages; ManufacturerSupertex; Environmental Compliance

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DN3765K4-G Overview

MOSfet nch depletion-mode vertical dmos fet

DN3765K4-G Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	TO-252
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	650 V
Maximum drain current (ID)	0.3 A
Maximum drain-source on-resistance	8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Number of components	1
Number of terminals	2
Operating mode	DEPLETION MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	0.5 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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DN3765

N-Channel Depletion-Mode

Vertical DMOS FET

Features

►

High input impedance

Low input capacitance

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage

General Description

This depletion-mode (normally-on) transistor utilizes an

advanced vertical DMOS structure and Supertex’s well-

proven silicon-gate manufacturing process. This combination

produces a device with the power handling capabilities of

bipolar transistors and with the high input impedance and

positive temperature coefﬁcient inherent in MOS devices.

Characteristic of all MOS structures, this device is free

from thermal runaway and thermally-induced secondary

breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

high breakdown voltage, high input impedance, low input

capacitance, and fast switching speeds are desired.

Applications

►

Normally-on switches

Solid state relays

Converters

Linear ampliﬁers

Constant current sources

Telecom

Ordering Information

Device

DN3765

Package Option

TO-252 (D-PAK)

DN3765K4-G

DSX

/BV

DGX

(V)

DS(ON)

(max)

(Ω)

(min)

(mA)

DSS

650

8.0

200

-G indicates package is RoHS compliant (‘Green’)

Absolute Maximum Ratings

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

Maximum junction temperature*

Value

DSX

DGX

±20V

-55

C to +150

150

Pin Conﬁguration

DRAIN

SOURCE

GATE

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

* Distance of 1.6mm from case for 10 seconds.

TO-252 (D-PAK) (K4)

Product Marking

YYWW

DN3765

LLLLLLL

YY = Year Sealed

WW = Week Sealed

L = Lot Number

= “Green” Packaging

TO-252 (D-PAK) (K4)

●

1235 Bordeaux Drive, Sunnyvale, CA 94089

●

Tel: 408-222-8888

●

www.supertex.com

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