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BLW77

Description
transistors RF bipolar RF transistor
Categorysemiconductor    Discrete semiconductor   
File Size34KB,1 Pages
ManufacturerAll Sensors
Environmental Compliance
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BLW77 Overview

transistors RF bipolar RF transistor

BLW77 Parametric

Parameter NameAttribute value
ManufactureAdvanced Semiconductor, Inc.
Product CategoryTransistors RF Bipol
RoHSYes
TypeRF Bipolar Powe
Transistor PolarityNPN
DC Collector/Base Gain hfe Mi15
Maximum Operating Frequency28 MHz
Collector- Emitter Voltage VCEO Max35 V
Emitter- Base Voltage VEBO3 V
Continuous Collector Curre12 A
Maximum Operating Temperature+ 200 C
Power Dissipati245 W
Mounting StyleScrew
Package / CaseSOT-123
PackagingTray
Maximum DC Collector Curre30 A
Minimum Operating Temperature- 65 C
BLW77
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI BLW77
is Designed for use in
class-AB or class-B operated high power
transmitters in the H.F. and V.H.F bands
and, as a Linear amplifier in the H.F.
band.
PACKAGE STYLE .500 4L FLG
FEATURES:
P
G
= 12 dB min. at 15-30 W/1.6-28 MHz
Common Emitter
Omnigold™
Metalization System
MAXIMUM RATINGS
I
C
V
CB
V
CE
P
DISS
T
J
T
STG
θ
JC
12 A
70 V
35 V
245 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
0.71 °C/W
1 = COLLECTOR
2 = BASE
3 & 4 = EMITTER
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CES
h
FE
C
c
G
P
d
3
η
I
C
= 50 mA
I
E
= 20 mA
V
E
= 35 V
T
C
= 25 °C
NONETEST
CONDITIONS
I
C
= 100 mA
MINIMUM TYPICAL MAXIMUM
35
70
3.0
20
UNITS
V
V
V
mA
---
pF
dB
V
CE
= 5.0 V
V
CB
= 28 V
I
C
= 7.0 A
f = 1.0 MHz
15
225
12
80
V
CE
= 28 V
I
C(ZS)
= 0.1 A
f = 1.6-28 MHz
P
L
= 15-130 W (PEP)
-30
37.5
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1

BLW77 Related Products

BLW77
Description transistors RF bipolar RF transistor
Manufacture Advanced Semiconductor, Inc.
Product Category Transistors RF Bipol
RoHS Yes
Type RF Bipolar Powe
Transistor Polarity NPN
DC Collector/Base Gain hfe Mi 15
Maximum Operating Frequency 28 MHz
Collector- Emitter Voltage VCEO Max 35 V
Emitter- Base Voltage VEBO 3 V
Continuous Collector Curre 12 A
Maximum Operating Temperature + 200 C
Power Dissipati 245 W
Mounting Style Screw
Package / Case SOT-123
Packaging Tray
Maximum DC Collector Curre 30 A
Minimum Operating Temperature - 65 C
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