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IPS105N03L G

Description
mosfet N-CH 30v 35a 10.5mohms
Categorysemiconductor    Discrete semiconductor   
File Size544KB,12 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
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IPS105N03L G Overview

mosfet N-CH 30v 35a 10.5mohms

IPS105N03L G Parametric

Parameter NameAttribute value
ManufactureInfine
Product CategoryMOSFET
RoHSYes
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage30 V
Vgs - Gate-Source Breakdown Voltage20 V
Id - Continuous Drain Curre35 A
Rds On - Drain-Source Resistance10.5 mOhms
ConfiguratiSingle
Maximum Operating Temperature+ 175 C
Pd - Power Dissipati38 W
Mounting StyleThrough Hole
Package / CaseIPAK-3
PackagingTube
Channel ModeEnhanceme
Fall Time2.4 ns
Minimum Operating Temperature- 55 C
Rise Time14 ns
Factory Pack Quantity1500
Typical Turn-Off Delay Time14 ns
Type
IPD105N03L G
IPS105N03L G
IPF105N03L G
IPU105N03L G
OptiMOS
®
3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC
1)
for target applications
• N-channel, logic level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• Avalanche rated
• Pb-free plating; RoHS compliant
Type
IPD105N03L G
IPF105N03L G
Product Summary
V
DS
R
DS(on),max
I
D
30
10.5
35
V
mΩ
A
IPS105N03L G
IPU105N03L G
Package
Marking
PG-TO252-3-11
105N03L
PG-TO252-3-23
105N03L
PG-TO251-3-11
105N03L
PG-TO251-3-21
105N03L
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
V
GS
=4.5 V,
T
C
=25 °C
V
GS
=4.5 V,
T
C
=100 °C
Pulsed drain current
2)
Avalanche current, single pulse
3)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1)
Value
35
33
35
27
245
35
30
6
±20
Unit
A
I
D,pulse
I
AS
E
AS
dv /dt
V
GS
T
C
=25 °C
T
C
=25 °C
I
D
=12 A,
R
GS
=25
I
D
=35 A,
V
DS
=24 V,
di /dt =200 A/µs,
T
j,max
=175 °C
mJ
kV/µs
V
J-STD20 and JESD22
Rev. 1.02
page 1
2008-04-15
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