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RSA6.1J4T2R

Description
tvs diode arrays tvs array4 elmnts
CategoryDiscrete semiconductor    diode   
File Size110KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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RSA6.1J4T2R Overview

tvs diode arrays tvs array4 elmnts

RSA6.1J4T2R Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
Reach Compliance Codecompli
ECCN codeEAR99
Factory Lead Time12 weeks
Samacsys DescriptiESD protection Devices(TVS): ROHM\'s zener diodes are available in various lineup as 2-pin mold surfacemount type and complex type.
Maximum clamping voltage6.65 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-609 codee3
Humidity sensitivity level1
Peak Reflow Temperature (Celsius)225
polarityUNIDIRECTIONAL
surface mountYES
Terminal surfaceMatte Tin (Sn)
Maximum time at peak reflow temperatureNOT SPECIFIED
RSA6.1J4
Diodes
ESD Protection diode
RSA 6.1J4
Application
ESD protection
Dimensions
(Unit : mm)
Land size figure
(Unit : mm)
0.4
1.6±0.1
0.13±0.05
(4)
1.2±0.1
1.6±0.1
Features
1) Ultra small mold type. (EMD5)
2) High reliability.
0.45
0.15 0.25
0.25 0.15 0.3
0.22±0.05
(5)
0½0.1
0.5
0.5
Construction
Silicon epitaxial planar
(1)
0.5
(2)
0.5
(3)
EMD5
0.5±0.05
1.0±0.1
Structure
ROHM : EMD5
JEITA : SC-75A Size
dot (year week factory)
Taping specifications
(Unit : mm)
1.75±0.1
4.0±0.1 2.0±0.05
φ1.5
−0
+0.1
0.3±0.1
1.65±0.1
5.5±0.2
0~0.1
3.5±0.05
8.0±0.2
1.7±0.05
1PIN 4.0±0.1
φ0.8±0.1
0.65±0.1
Absolute maximum ratings
(Ta=25°C)
Param eter
Peak puls e power-1 (tp=10×1000us )
Peak puls e power-2 (tp=8×20us )
Junction tem perature
Storage tem perature
Sym bol
P
pk
P
pk
Tj
Ts tg
Lim its
10
80
150
-55 to +150
Unit
W
W
Electrical characteristics
(Ta=25°C)
Param eter
Zener voltage
Revers e current
Forward voltage
Capacitance between term inals
Sym bol
V
Z
I
R
V
F
C
t
Min.
6.1
-
-
-
Typ.
-
-
-
35
Max.
7.20
1.0
1.0
-
Unit
V
µA
V
pF
I
Z
=1m A
V
R
=3.0V
I
F
=100m A
f=1MHz,V
R
=0V
Conditions
Rev.C
1.65±0.01
1.55
1/2
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