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BCW89,215

Description
transistors bipolar - bjt trans GP tape-7
CategoryDiscrete semiconductor    The transistor   
File Size56KB,7 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BCW89,215 Overview

transistors bipolar - bjt trans GP tape-7

BCW89,215 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconductor
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTO-236
Contacts3
Manufacturer packaging codeSOT23
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.35 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
VCEsat-Max0.3 V
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
BCW89
PNP general purpose transistor
Product data sheet
Supersedes data of 1997 Mar 11
1999 Apr 15

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