PBSS4350Z,135 datasheet, PDF - EEWORLD Datasheet

PBSS4350Z,135: Descriptiontransistors bipolar - bjt npn 50v 3A; CategoryDiscrete semiconductor The transistor; File Size93KB，10 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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PBSS4350Z,135 Overview

transistors bipolar - bjt npn 50v 3A

Parameter Name	Attribute value
Brand Name	NXP Semiconduc
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	SC-73
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Manufacturer packaging code	SOT223
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	200
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	2 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

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