FQB34P10TM_F085 100V P-Channel MOSFET
March 2012
QFET
FQB34P10TM_F085
100V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
TM
Features
•
•
•
•
•
•
•
•
•
-33.5A, -100V, R
DS(on)
= 0.06Ω @V
GS
= -10 V
Low gate charge ( typical 85 nC)
Low Crss ( typical 170 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175°C maximum junction temperature rating
Qualified to AEC Q101
RoHS
Compliant
S
D
G
!
!
●
●
▶ ▲
G
S
FQB Series
D
2
-PAK
●
!
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
D
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQB34P10TM_F085
-100
-33.5
-23.5
-134
±
25
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
2200
-33.5
15.5
-6.0
3.75
155
1.03
-55 to +175
300
T
J
, T
STG
T
L
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
Typ
--
--
--
Max
0.97
40
62.5
Units
°C/W
°C/W
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2012
Fairchild Semiconductor Corporation
FQB34P10TM_F085 Rev. C1
1
www.fairchildsemi.com
FQB34P10TM_F085 100V P-Channel MOSFET
Electrical Characteristics
Symbol
Parameter
T
C
= 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
∆BV
DSS
/
∆T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= -250
µA
I
D
= -250
µA,
Referenced to 25°C
V
DS
= -100 V, V
GS
= 0 V
V
DS
= -80 V, T
C
= 150°C
V
GS
= -25 V, V
DS
= 0 V
V
GS
= 25 V, V
DS
= 0 V
-100
--
--
--
--
--
--
-0.1
--
--
--
--
--
--
-1
-10
-100
100
V
V/°C
µA
µA
nA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
DS
= V
GS
, I
D
= -250
µA
V
GS
= -10 V, I
D
= -16.75 A
V
DS
= -40 V, I
D
= -16.75 A
(Note 4)
-2.0
--
--
--
0.049
23
-4.0
0.06
--
V
Ω
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= -25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
2240
730
170
2910
950
220
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= -50 V, I
D
= -33.5 A,
R
G
= 25
Ω
(Note 4, 5)
--
--
--
--
--
--
--
25
250
160
210
85
15
45
60
510
330
430
110
--
--
ns
ns
ns
ns
nC
nC
nC
V
DS
= -80 V, I
D
= -33.5 A,
V
GS
= -10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
V
GS
= 0 V, I
S
= -33.5 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= -33.5 A,
dI
F
/ dt = 100 A/µs
(Note 4)
--
--
--
--
--
--
--
--
160
0.88
-33.5
-134
-4.0
--
--
A
A
V
ns
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L =3.9mH, I
AS
= -33.5A, V
DD
= -25V, R
G
= 25
Ω,
Starting T
J
= 25°C
3. I
SD
≤
-33.5A, di/dt
≤
300A/µs, V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
FQB34P10TM_F085 Rev. C1
2
www.fairchildsemi.com
FQB34P10TM_F085 100V P-Channel MOSFET
Typical Characteristics
10
2
-I
D
, Drain Current [A]
-I
D
, Drain Current [A]
10
1
V
GS
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-5.5 V
-5.0 V
Bottom : -4.5 V
Top :
10
2
10
1
175
℃
10
0
25
℃
10
0
10
-1
-55
℃
※
Notes :
1. V
DS
= -40V
2. 250µ s Pulse Test
※
Note :
1. 250µ s Pulse Test
2. T
C
= 25
℃
10
-2
10
-1
10
0
10
1
10
-1
2
4
6
8
10
-V
DS
, Drain-Source Voltage [V]
-V
GS
, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.35
10
2
R
DS(on)
[
Ω
],
Drain-Source On-Resistance
V
GS
= - 10V
0.25
0.20
V
GS
= - 20V
0.15
0.10
0.05
0.00
-I
DR
, Reverse Drain Current [A]
0.30
10
1
10
0
175
℃
25
℃
※
Note : T = 25
℃
J
※
Notes :
1. V
GS
= 0V
2. 250µs Pulse Test
0
25
50
75
100
125
150
175
200
10
-1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-I
D
, Drain Current [A]
-V
SD
, Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
6500
6000
5500
5000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
12
-V
GS
, Gate-Source Voltage [V]
C
oss
C
iss
※
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
10
V
DS
= -20V
V
DS
= -50V
V
DS
= -80V
Capacitances [pF]
4500
4000
3500
3000
2500
2000
1500
1000
500
0
-1
10
8
6
C
rss
4
2
※
Note : I
D
= -33.5 A
10
0
10
1
0
0
20
40
60
80
100
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
FQB34P10TM_F085 Rev. C1
3
www.fairchildsemi.com
FQB34P10TM_F085 100V P-Channel MOSFET
Typical Characteristics
(Continued)
1.2
2.5
-BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.0
1.1
1.5
1.0
1.0
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= -250 µA
0.5
※
Notes :
1. V
GS
= -10 V
2. I
D
= -16.75 A
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
40
Operation in This Area
is Limited by R
DS(on)
35
10
2
100
µ
s
1 ms
10 ms
-I
D
, Drain Current [A]
2
-I
D
, Drain Current [A]
30
25
20
15
10
5
0
25
10
1
DC
10
0
※
Notes :
1. T
C
= 25 C
o
2. T
J
= 175 C
3. Single Pulse
o
10
-1
10
0
10
1
10
50
75
100
125
150
175
-V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [
℃
]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
10
0
D = 0 .5
Z
θ
JC
(t), Thermal Response
0 .2
10
-1
0 .1
0 .0 5
0 .0 2
0 .0 1
sin g le p u ls e
※
N ote s :
1. Z
θ
J C
(t) = 0 .97
℃
/W M a x.
2. D u ty F a cto r, D = t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
P
DM
t
1
t
2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a re W a v e P u lse D u ra tio n [se c ]
Figure 11. Transient Thermal Response Curve
FQB34P10TM_F085 Rev. C1
4
www.fairchildsemi.com
Gate Charge Test Circuit & Waveform
50KΩ
12V
200nF
300nF
Same Type
as DUT
V
DS
V
GS
-10V
Q
gs
Q
g
V
GS
Q
gd
DUT
-3mA
Charge
Resistive Switching Test Circuit & Waveforms
V
DS
R
G
V
GS
R
L
V
DD
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
V
GS
10%
-10V
DUT
V
DS
90%
Unclamped Inductive Switching Test Circuit & Waveforms
L
V
DS
I
D
R
G
-10V
t
p
BV
DSS
1
E
AS
= ---- L I
AS2
--------------------
2
BV
DSS
- V
DD
t
p
Time
V
DS
(t)
V
DD
DUT
V
DD
I
D
(t)
I
AS
BV
DSS
FQB34P10TM_F085 Rev. C1
5
www.fairchildsemi.com
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