ARS35M datasheet, PDF - EEWORLD Datasheet

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ARS35M: Description35 A, 1000 V, SILICON, RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size30KB，2 Pages; ManufacturerHY Electronic; Websitehttp://www.hygroup.com.tw

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ARS35M Overview

35 A, 1000 V, SILICON, RECTIFIER DIODE

ARS35M Parametric

Parameter Name	Attribute value
Maker	HY Electronic
package instruction	O-PEDB-N2
Reach Compliance Code	unknow
Other features	LOW POWER LOSS
application	GENERAL PURPOSE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-30 code	O-PEDB-N2
Maximum non-repetitive peak forward current	500 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	35 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	DISK BUTTON
Maximum repetitive peak reverse voltage	1000 V
Maximum reverse current	10 µA
surface mount	YES
Terminal form	NO LEAD
Terminal location	END

ARS35M Related Products

	ARS35M	AR35G	AR35J	ARS35B	ARS35D	ARS35J	ARS35K	ARS35G	ARS35A
Description	35 A, 1000 V, SILICON, RECTIFIER DIODE	35 A, 400 V, SILICON, RECTIFIER DIODE	35 A, 600 V, SILICON, RECTIFIER DIODE	35 A, 100 V, SILICON, RECTIFIER DIODE	35 A, 200 V, SILICON, RECTIFIER DIODE	35 A, 600 V, SILICON, RECTIFIER DIODE	35 A, 800 V, SILICON, RECTIFIER DIODE	35 A, 400 V, SILICON, RECTIFIER DIODE	35 A, 50 V, SILICON, RECTIFIER DIODE
package instruction	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow
Other features	LOW POWER LOSS	LOW POWER LOSS	LOW POWER LOSS	LOW POWER LOSS	LOW POWER LOSS	LOW POWER LOSS	LOW POWER LOSS	LOW POWER LOSS	LOW POWER LOSS
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V
JESD-30 code	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2
Maximum non-repetitive peak forward current	500 A	500 A	500 A	500 A	500 A	500 A	500 A	500 A	500 A
Number of components	1	1	1	1	1	1	1	1	1
Phase	1	1	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	35 A	35 A	35 A	35 A	35 A	35 A	35 A	35 A	35 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
Maximum repetitive peak reverse voltage	1000 V	400 V	600 V	100 V	200 V	600 V	800 V	400 V	50 V
Maximum reverse current	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	END	END	END	END	END	END	END	END	END
Maker	HY Electronic	HY Electronic	-	HY Electronic	HY Electronic	HY Electronic	HY Electronic	-	-

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