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DTE2311
P-Channel 20-V (D-S) MOSFET
FEATURES
I
D
(A)
- 4.2
- 3.6
PRODUCT SUMMARY
V
DS
(V)
- 20
R
DS(on)
(Ω)
0.045 at V
GS
= - 4.5 V
0.072 at V
GS
= - 2.5 V
•
Halogen-free
RoHS
COMPLIANT
TO-226AA
(TO-92)
S
G
1
S*
G
2
D
3
Top View
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
- 1.35
1.5
1.0
- 55 to 150
- 4.2
- 3.9
- 20
- 0.95
1.05
0.67
W
°C
10 s
Steady State
- 20
± 12
- 4.0
- 3.2
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t
≤
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
65
100
43
Maximum
83
120
52
°C/W
Unit
1
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SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= - 1.35 A, di/dt = 100 A/µs
V
DD
= - 6 V, R
L
= 6
Ω
I
D
≅
- 1 A, V
GEN
= - 4.5 V, R
g
= 6
Ω
f = 1 MHz
V
DS
= - 6 V, V
GS
= - 4.5 V, I
D
= - 4.2 A
10
1.8
3
7.7
45
60
70
35
65
70
90
110
55
ns
Ω
15
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= - 12 V, V
GS
= 0 V
V
DS
= - 12 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
= - 5 V, V
GS
= - 4.5 V
V
GS
=
- 4.5 V, I
D
= - 4.2 A
V
GS
= - 2.5 V, I
D
= - 3.6 A
V
DS
= - 5 V, I
D
= - 4.2 A
I
S
= - 1.35 A, V
GS
= 0 V
- 20
0.032
0.053
14
- 0.77
- 1.1
0.045
0.072
- 0.6
- 1.5
± 100
-1
- 25
V
nA
µA
A
Ω
S
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
DTE2311
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
20
V
GS
= 4.5 thru 3 V
16
16
I
D
- Drain Current (A)
20
I
D
- Drain Current (A)
2.5 V
12
12
8
2V
4
8
T
C
= 125 °C
25 °C
- 55 °C
4
0
0
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.10
1500
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DTE2311
0.08
C - Capacitance (pF)
V
GS
= 2.5 V
0.06
1200
C
iss
900
R
DS(on)
-
0.04
V
GS
= 4.5 V
600
C
oss
0.02
300
C
rss
0.00
0
4
8
12
16
20
0
0
2
4
6
8
10
12
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
6
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 6 V
I
D
= 4.8 A
1.4
R
DS(on)
- On-Resistance
(Normalized)
1.6
V
GS
= 4.5 V
I
D
= 4.8 A
Capacitance
5
4
1.2
3
1.0
2
0.8
1
0.6
- 50
0
0
3
6
9
12
15
Q
g
- Total Gate Charge (nC)
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
0.15
On-Resistance vs. Junction Temperature
10
T
J
= 150 °C
T
J
= 25 °C
1
R
DS(on)
- On-Resistance (Ω)
0.12
I
S
- Source Current (A)
0.09
I
D
= 4.8 A
0.06
0.03
0.1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
3
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.4
50
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DTE2311
0.3
V
GS(th)
Variance (V)
40
I
D
= 250
µA
Power (W)
30
0.2
0.1
20
0.0
10
- 0.1
- 0.2
- 50
- 25
0
25
50
75
100
125
150
0
10
-3
10
-2
10
-1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Single Pulse Power, Junction-to-Ambient
10
I
D
- Drain Current (A)
Limited
by R
DS(on)
*
1 ms
1
10 ms
100 ms
1s
10 s
DC
0.1
T
C
= 25 °C
Single Pulse
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 100 °C/W
t
1
t
2
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square Wave Pulse Duration (s)
3. T
JM
-
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
4
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
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DTE2311
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
5
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