c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
d. Maximum under Steady State conditions is 110 °C/W.
1
www.din-tek.jp
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 4.4 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 2 A
0.8
25
25
18
7
T
C
= 25 °C
3.1
30
1.2
50
50
A
V
ns
nC
ns
b
DTM4946
Symbol
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 5.3 A
V
GS
= 4.5 V, I
D
= 4.7 A
V
DS
= 15 V, I
D
= 5.3 A
Min.
60
Typ.
Max.
Unit
V
53
- 6.7
1.0
2.4
3.0
± 100
1
10
30
0.023
0.031
24
840
0.035
0.04
mV/°C
V
nA
µA
A
Ω
S
V
DS
= 30 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 30 V, V
GS
= 10 V, I
D
= 5.3 A
V
DS
= 30 V, V
GS
= 5 V, I
D
= 5.3 A
f = 1 MHz
V
DD
= 30 V, R
L
= 6.8
Ω
I
D
≅
4.4 A, V
GEN
= 4.5 V, R
g
= 1
Ω
3.1
71
44
17
9.2
3.3
3.7
6.5
20
120
20
30
10
9.5
30
180
30
45
15
20
40
15
25
12
pF
nC
Ω
ns
V
DD
= 30 V, R
L
= 6.8
Ω
I
D
≅
4.4 A, V
GEN
= 10 V, R
g
= 1
Ω
12
25
10
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
TYPICAL CHARACTERISTICS
30
25 °C, unless otherwise noted
10
www.din-tek.jp
DTM4946
V
GS
= 10 V thru 5 V
25
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
20
4V
15
6
4
T
C
= 150 °C
2
25 °C
10
5
3V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
- 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.100
1200
Transfer Characteristics
R
DS(on)
- On-Resistance (mΩ)
0.080
C - Capacitance (pF)
1000
C
iss
800
0.060
V
GS
= 4.5 V
0.040
V
GS
= 10 V
0.020
600
400
200
C
rss
0
10
C
oss
0.000
0
5
10
15
20
25
30
0
20
30
40
50
60
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 5.3 A
8
R
DS(on)
- On-Resistance
1.8
V
DS
= 30 V
6
V
DS
= 48 V
4
2.2
I
D
= 5.3 A
2.0
V
GS
- Gate-to-Source Voltage (V)
Capacitance
V
GS
= 10 V
(Normalized)
1.6
1.4
1.2
1.0
0.8
V
GS
= 4.5 V
2
0
0
4
8
12
16
20
0.6
- 50
- 25
0
25
50
75
100
125
150
175
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
3
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
30
R
DS(on)
- Drain-to-Source On-Resistance (Ω)
0.10
www.din-tek.jp
DTM4946
I
D
= 5.3 A
0.08
T
J
= 150 °C
0.06
I
S
- Source Current (A)
10
T
J
= 175 °C
0.04
T
J
= 25 °C
0.02
T
J
= 25 °C
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
- Source-to-Drain Voltage (V)
0.00
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
3.0
2.8
2.6
I
D
= 250 µA
2.4
V
GS(th)
(V)
2.2
2.0
1.8
1.6
5
1.4
1.2
- 50
0
0.01
Power (W)
15
20
25
On-Resistance vs. Gate-to-Source Voltage
10
- 25
0
25
50
75
100
125
150
175
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Single Pulse Power, Junction-to-Ambient
10
I
D
- Drain Current (A)
Limited by R
DS(on)
*
100 µs
1
1 ms
10 ms
0.1
100 ms
T
A
= 25 °C
Single Pulse
1s
10 s
DC
10
100
0.01
0.01
0.1
1
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
4
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
8
7
6
I
D
- Drain Current (A)
Power (W)
5
4
3
2
1
0
0
25
50
75
100
125
150
175
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
www.din-tek.jp
DTM4946
125
150
175
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
100
Power, Junction-to-Case
I
C
- Peak Avalanche Current (A)
10
T
A
=
L · I
D
BV - V
DD
1
0.000001
0.00001
0.0001
0.001
T
A
- Time In Avalanche (s)
Single Pulse Avalanche Capability
* The power dissipation P
D
is based on T
J(max)
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
京公网安备 11010802033920号
EEWORLD
