INCHANGE Semiconductor
isc
Product Specification
isc N-Channel MOSFET Transistor
2SK530
DESCRIPTION
·Drain
Current
–I
D
=5A@ T
C
=25℃
·Drain
Source Voltage-
: V
DSS
=400V(Min)
·Fast
Switching Speed
APPLICATIONS
·Designed
especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
DSS
V
GS
I
D
P
tot
T
j
T
stg
ARAMETER
Drain-Source Voltage (V
GS
=0)
Gate-Source Voltage
Drain Current-continuous@ TC=25℃
Total Dissipation@TC=25℃
Max. Operating Junction Temperature
Storage Temperature Range
VALUE
400
±20
5
40
150
-55~150
UNIT
V
V
A
W
℃
℃
isc website：www.iscsemi.cn
1
isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc
Product Specification
isc N-Channel Mosfet Transistor
·ELECTRICAL
CHARACTERISTICS (T
C
=25℃)
SYMBOL
V
(BR)DSS
V
GS(TH)
R
DS(ON)
V
DS(ON)
I
GSS
I
DSS
tr
ton
tf
toff
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-stage Resistance
Drain-Source Saturation Voltage
Gate Source Leakage Current
Zero Gate Voltage Drain Current
Rise time
Turn-on time
Fall time
Turn-off time
CONDITIONS
V
GS
=0; I
D
= 10mA
V
DS
= 10V; I
D
= 1mA
V
GS
= 10V; I
D
=3A
I
F
= 8A; V
GS
=10V
V
GS
=
±20V;
V
DS
= 0
V
DS
=400V; V
GS
= 0
25
40
30
140
MIN
TYP.
2SK530
MAX
UNIT
V
400
1.5
1.0
10
3.5
1.4
18
±100
1
50
80
70
280
V
Ω
V
nA
mA
ns
ns
ns
ns
V
GS
=10V;I
D
=2A;
R
L
=50Ω
isc website：www.iscsemi.cn
2
isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
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