GAAR50Z datasheet, PDF - EEWORLD Datasheet

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GAAR50Z: DescriptionRectifier Diode, Avalanche, 1 Phase, 1 Element, 50A, 20V V(RRM), Silicon,; CategoryDiscrete semiconductor diode; ManufacturerGood-Ark; Environmental Compliance; Suzhou Gotech is a complete and comprehensive manufacturer of design, manufacturing, packaging and sales in the domestic semiconductor discrete device diode industry. From the independent development of front-end chips to various packaging technologies of back-end finished products, it has formed a complete industrial chain. The main products include leadless integrated circuit products and discrete device products with the latest packaging technology, automotive rectifier diodes, power modules, rectifier diode chips, silicon rectifier diodes, switching diodes, Zener diodes, micro bridge piles, military fuses, photovoltaic bypass modules, etc., with a total of more than 50 series and more than 1,500 varieties. The products are widely used in many fields such as aerospace, automobiles, green lighting, IT, household appliances and power supply devices for large equipment. Design and develop silver paste for solar cells and various electronic pastes, and develop and mass produce various new sensors in the field of the Internet of Things.

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GAAR50Z Overview

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 50A, 20V V(RRM), Silicon,

GAAR50Z Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Objectid	1283665976
Reach Compliance Code	compliant
ECCN code	EAR99
application	HIGH POWER
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.07 V
JESD-30 code	O-PEDB-N2
Maximum non-repetitive peak forward current	600 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	50 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	DISK BUTTON
Maximum repetitive peak reverse voltage	20 V
Maximum reverse current	2 µA
surface mount	YES
technology	AVALANCHE
Terminal form	NO LEAD
Terminal location	END

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GAAR50Z/GAARS50Z

Avalanche Automotive Diode

Avalanche Voltage 24 to 32Volts Current 50 Amps

Technical Specification:

Features:

High power capability

Economical

Avalanche Voltage: 24V to 32V

Mechanical Data:

Case : transfer molded plastic

Epoxy: UL94-0 rate flame ratardant

Polarity: Color ring denotes cathode.

Technology vacuum soldered

Lead: Plated slug, solderable per MIL-STD-202E method 208C

Weight: 0.064 ounce, 1.8 grams(Approximately)

Dimensions in inches and (millimeters)

Maximum Ratings and Electrical Characteristics

Rating at 25

C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load derate current by 20%.

Electrical Characteristics @ 25

Peak repetitive reverse voltage

Working peak reverse voltage

DC blocking voltage

Average rectified forward current at T

=125

Repetitive peak reverse surge current

=10msec duty cycle <1%

Breakdown voltage (V

=100mA, T

=25

=90Amps, T

=150

C, PW=80

sec

Forward voltage drop (V

fwd

)@I

=100Amps<300

sec

Peak forward surge current

Reverse leakage (V

=20Vdc) T

=25

Operating and storage junction temperature range

Notes:

Symbols

RRM

RWM

RSM

br1

br2

FSM

, T

STG

0.2

0.97

Min.

Nominal

25/27

1.02

600

1.0

-65 to +175

2.0

1.07

Max.

Units

Volts

Amps

Volts

Ampes

1. Enough heatsink must be considered in application.

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