3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB
Parameter Name | Attribute value |
Number of terminals | 2 |
Number of components | 1 |
Processing package description | SMCJ, 2 PIN |
state | ACTIVE |
packaging shape | Rectangle |
Package Size | SMALL OUTLINE |
surface mount | Yes |
Terminal form | C BEND |
terminal coating | tin lead |
Terminal location | pair |
Packaging Materials | Plastic/Epoxy |
structure | single |
Diode component materials | silicon |
Diode type | rectifier diode |
application | GENERAL PURPOSE |
Phase | 1 |
Maximum reverse recovery time | 2 us |
Maximum repetitive peak reverse voltage | 50 V |
Maximum average forward current | 3 A |
Maximum non-repetitive peak forward current | 100 A |
S3A | S3M | S3K | S3J | S3G | S3D | S3B | |
---|---|---|---|---|---|---|---|
Description | 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB | 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AB | 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB | RECTIFIER DIODE | 3 A, 400 V, SILICON, RECTIFIER DIODE | 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AB | RECTIFIER DIODE |
state | ACTIVE | ACTIVE | - | ACTIVE | DISCONTINUED | - | ACTIVE |
Diode type | rectifier diode | rectifier diode | - | RECTIFIER DIODE | rectifier diode | - | RECTIFIER DIODE |