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MB4S

Description
0.8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size125KB,2 Pages
ManufacturerETC2
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MB4S Overview

0.8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE

MB4S Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Maximum average input current0.8000 A
Processing package descriptionPlastic, MB-S, 4 PIN
stateTRANSFERRED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingNOT SPECIFIED
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureBridge, 4 ELEMENTS
Diode component materialssilicon
Diode typebridge rectifier diode
Phase1
Maximum repetitive peak reverse voltage400 V
Maximum non-repetitive peak forward current30 A
MB2S thru MB10S
Case:
MBS
Glass Passivated Single
Phase Bridge Rectifiers
Reverse Voltage
200 to 1000V
Forward Current
0.5 Amp
Features
Glass passivated die construction
Ideal for automatic insertion
Plastic material used carries UL
flammability recognition 94V-0
High surge current capability
High case dielectric strength of 1500
VRMS
Dimensions in inches and (millimeters)
SMSC
Catalog
Number
MB2S
MB4S
MB6S
MB8S
MB10S
Maximum
Repetitive
Peak
Reverse
Voltage
200V
400V
600V
800V
1000V
Maximum
RMS Voltage
140V
280V
420V
560V
700V
Maximum DC
Blocking
Voltage
200V
400V
600V
800V
1000V
Mechanical Data
Case:
Molded plastic case
Terminals:
Plated leads solderable per
MIL-STD-750, Method 2026
Polarity:
Marked on Body
Mounting Position:
Any
Weight:
0.078 oz., 0.22g
Maximum Ratings and Thermal Characteristics
(TA = 25℃ unless otherwise noted)
Maximum average forward output rectified current
Tc =40℃
I
F(AV)
I
FSM
i
2
t
R
θJA
R
θJC
Tj, TSTG
0.5
35
5.0
85
20
-55 to 150
A
A
A
2
s
℃/W
Peak forward surge current single half sine-wave superimposed
on rated load (JEDEC Method)
Rating for fusing (t<8.3ms)
Maximum thermal resistance per leg
(1)
Operating Junction and storage temperature range
Electrical Characteristics
(TA = 25℃ unless otherwise noted)
Maximum Instantaneous Forward Voltage per leg
Maximum DC reverse current at rated DC blocking voltage per
leg
Typical Junction Capacitance per leg
Notes:
V
F
I
R
CJ
1.0V
5.0µA
500µA
13pF
I
FM
=0.5A
T
A
= 25℃
T
A
= 125℃
1.0MHZ,
VR=4.0V
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.47
x 0.47” (12 x 12mm) copper pads.
www.
smsemi.com
1
Document Number: MB2S thru MB10S
Jul.27, 2009

MB4S Related Products

MB4S MB2S MB2S-MB10S MB10S MB8S
Description 0.8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 0.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
state TRANSFERRED ACTIVE ACTIVE ACTIVE DISCONTINUED
Diode type bridge rectifier diode BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE bridge rectifier diode bridge rectifier diode

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