GaAlAs Infrared Emitter
OPE6794WK
The
OPE6794WK
is GaAlAs infrared emitting diode
DIMENSIONS (Unit : mm)
that is designed for high radiant intensity and
low forward voltage .This device is optimized for efficiency
at emission wavelength 940nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-3/4 plastic package
and has wide beam angle with lensed package
and cup frame.
5.0
5.7
8.7
7.7
FEATURES
•
High-output power
•
Wide beam angle
•
Available for pulse operating
APPLICATIONS
•
Optical emitters
•
Optical switches
•
Smoke sensors
•
IR remote control
•
IR sound transmission
1.3 Max
2-□0.5
2.0
2.5
① ②
24.0 Min
①
②
Anode
Cathode
Tolerance :
±0.2mm
STORAGE
•
Condition : 5°C~35°C,R.H.60%
•
Terms : within 3 months from production date
•
Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions and environments
for this device.
MAXIMUM RATINGS
Item
Symbol
Rating
Power Dissipation
P
D
150
Forward current
I
F
100
*1
I
FP
1.0
Pulse forward current
Reverse voltage
V
R
5.0
Operating temp.
Topr.
-25~ +85
*2
Tsol.
260.
Soldering temp.
*1
.Duty ratio = 1/100, pulse width=0.1ms.
*2
.Lead Soldering Temperature (2mm from case for 5sec.).
ELECTRO-OPTICALCHARACTERISTICS
Item
Forward voltage
Reverse current
Capacitance
Radiant intensity
Peak emission wavelength
Spectral bandwidth 50%
Half angle
Symbol
V
F
I
R
Ct
Ie
λ
p
Δλ
Δθ
Conditions
I
F
=100mA
V
R
= 5V
f = 1MHz
I
F
=100mA
I
F
= 50mA
I
F
= 50mA
I
F
=100mA
20
50
940
45
±30
Min.
Typ.
1.4
1.7
10
(Ta=25°C )
Unit
mW
mA
A
V
°C
°C
(Ta=25°C)
Max.
Unit
V
µA
pF
mW/㏛
nm
nm
deg.
35
GaAlAs Infrared Emitter
!
FORWARD CURRENT Vs.
AMBIENT TEMP.
!
400
200
100
50
30
10
5
3
1
0.5
0.3
0.1
0
20
40
60
80
Ambient Temperature Ta(℃)
100
OPE6794WK
RADIANT INTENSITY Vs.
FORWARD CURRENT.
Ta=25
Ta=25℃
100
80
60
40
20
0
-20
1
3 5 10
30 50 100 200 500
Forward Current IF(mA)
!
RELATIVE RADIANT INTENSITY Vs.
AMBIENT TEMP.
I
F
=50mA
!
1.0
RELATIVE RADIANT INTENSITY Vs.
EMISSION WAVELENGTH.
Ta=25℃
0.8
0.6
3
2
1
0.8
0.5
0.3
0.2
0.1
-20
0
20
40
60
80
100
0.4
0.2
0.0
800
Ambient Temperature Ta(℃)
!
100
Ta=25℃
50
30
20
10
5
4
3
2
1
1.0
1.1
1.2
1.3
1.4
Forward Voltage V
F
(V)
1.5
1.6
850 900 950 1000 1050
Emission Wavelength
λ(nm)
FORWARD CURRENT Vs.
FORWARD VOLTAGE
!
ANGULAR DISPLACEMENT Vs
RELATIVE RADIANT INTENSITY
Ta=25℃
-20°
-30°
-40°
-50°
-10°
0°
10°
20°
30°
40°
50°
60°
70°
80°
90°
1.0
-60°
-70°
-80°
-90°
1.0
0.5
0
0.5
Relative Radiant intensity
36
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