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SA33A

Description
500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size50KB,4 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
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SA33A Overview

500 W, UNIDIRECTIONAL, SILICON, TVS DIODE

SA33A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
package instructionO-PALF-W2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresEXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN
Maximum breakdown voltage40.6 V
Minimum breakdown voltage36.7 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak reverse power dissipation500 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation3 W
Maximum repetitive peak reverse voltage33 V
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
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