5962R9574701TXX datasheet, PDF

5962R9574701TXX: DescriptionHCT SERIES, 8-BIT DRIVER, TRUE OUTPUT, CDFP20; Categorylogic logic; File Size95KB，3 Pages; ManufacturerIntersil ( Renesas ); Websitehttp://www.intersil.com/cda/home/

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5962R9574701TXX Overview

HCT SERIES, 8-BIT DRIVER, TRUE OUTPUT, CDFP20

Parameter Name	Attribute value
Objectid	1536270107
package instruction	,
Reach Compliance Code	unknown
series	HCT
JESD-30 code	R-CDFP-F20
Logic integrated circuit type	BUS DRIVER
Number of digits	8
Number of functions	1
Number of ports	2
Number of terminals	20
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Output characteristics	3-STATE
Output polarity	TRUE
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLATPACK
Certification status	Not Qualified
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal form	FLAT
Terminal location	DUAL
total dose	100k Rad(Si) V

	5962R9574701TXX	5962R9574701TRX
Description	HCT SERIES, 8-BIT DRIVER, TRUE OUTPUT, CDFP20	HCT SERIES, 8-BIT DRIVER, TRUE OUTPUT, CDIP20
Objectid	1536270107	1536269408
Reach Compliance Code	unknown	unknown
series	HCT	HCT
JESD-30 code	R-CDFP-F20	R-CDIP-T20
Logic integrated circuit type	BUS DRIVER	BUS DRIVER
Number of digits	8	8
Number of functions	1	1
Number of ports	2	2
Number of terminals	20	20
Maximum operating temperature	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C
Output characteristics	3-STATE	3-STATE
Output polarity	TRUE	TRUE
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLATPACK	IN-LINE
Certification status	Not Qualified	Not Qualified
Maximum supply voltage (Vsup)	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V
surface mount	YES	NO
technology	CMOS	CMOS
Temperature level	MILITARY	MILITARY
Terminal form	FLAT	THROUGH-HOLE
Terminal location	DUAL	DUAL
total dose	100k Rad(Si) V	100k Rad(Si) V

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