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SA8.0

Description
500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15
Categorysemiconductor    Discrete semiconductor   
File Size50KB,4 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Download Datasheet View All

SA8.0 Overview

500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15

SA5.0 - SA170A
V
BR
: 6.8 - 200 Volts
P
PK
: 500 Watts
FEATURES :
* 500W surge capability at 1ms
* Excellent clamping capability
* Low zener impedance
* Fast response time : typically less
then 1.0 ps from 0 volt to V
BR(min.)
* Typical I
R
less then 1µA above 10V
TRANSIENT VOLTAGE
SUPPRESSOR
DO - 41
0.107 (2.74)
0.080 (2.03)
1.00 (25.4)
MIN.
0.205 (5.20)
0.160 (4.10)
MECHANICAL DATA
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end except Bipolar.
* Mounting position : Any
* Weight : 0.339 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and (millimeters)
DEVICES FOR BIPOLAR APPLICATIONS
For bi-directional use C or CA Suffix
Electrical characteristics apply in both directions
MAXIMUM RATINGS
Rating at 25
°C
ambient temperature unless otherwise specified.
Rating
Peak Power Dissipation at Ta = 25
°C,
Tp=1ms
(Note1)
Steady State Power Dissipation at T
L
= 75
°C
Lead Lengths 0.375", (9.5mm)
(Note 2)
Peak Forward Surge Current, 8.3ms Single Half
Sine-Wave Superimposed on Rated Load
(JEDEC Method)
(Note 3)
Operating and Storage Temperature Range
Note :
Symbol
P
PK
Value
Minimum 500
Unit
Watts
P
D
3.0
Watts
I
FSM
T
J,
T
STG
70
- 65 to + 175
Amps.
°C
(1) Non-repetitive Current pulse, per Fig. 5 and derated above Ta = 25
°C
per Fig. 1
(2) Mounted on Copper Leaf area of 1.57 in
2
(40mm
2
).
(3) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minutes maximum.
UPDATE : SEPTEMBER 18, 2000

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