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HWTF-9-AT-23200F-NT

Description
Fixed Resistor, Thin Film, 0.75W, 2320ohm, 1% +/-Tol, -150,150ppm/Cel, 1505,
CategoryPassive components    The resistor   
File Size291KB,2 Pages
ManufacturerMini-Systems Inc (MSI)
Websitehttp://www.mini-systemsinc.com
Download Datasheet Parametric View All

HWTF-9-AT-23200F-NT Overview

Fixed Resistor, Thin Film, 0.75W, 2320ohm, 1% +/-Tol, -150,150ppm/Cel, 1505,

HWTF-9-AT-23200F-NT Parametric

Parameter NameAttribute value
Objectid271172278
Reach Compliance Codecompliant
ECCN codeEAR99
structureChip
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package height0.254 mm
Package length3.886 mm
Package formSMT
Package width1.27 mm
Rated power dissipation(P)0.75 W
resistance2320 Ω
Resistor typeFIXED RESISTOR
seriesHWTF
size code1505
technologyTHIN FILM
Temperature Coefficient150 ppm/°C
Tolerance1%
MICROWAVE CHIP RESISTORS
MSMW
Mini-Systems, Inc.
Top Contact Microwave Chip Resistor
series is designed to fit a wide variety of applications operating in the Microwave Bands. All
sizes offer the
high stability, flat frequency response
and
low noise
of Mini-Systems, Inc. Thin Film materials.
Specialized LASER trim
techniques
specifically designed for this series guarantee operation up to
40 GHz.
Microwave Chip Resistors can be attached to associated circuitry through ribbon
or wire bonding, conductive epoxy, soldering to terminations or mounted as flip-chips.
Wire bondable gold
OR Solderable gold with nickel barrier
OR Nickel barrier pre-soldered
GENERAL CHARACTERISTICS
Resistance Range
Resistance Tolerance
Termination
1
Backing Material
Operating Temperature
Storage Temperature
Operating Voltage
VSWR
2
(G) Non-Solderable Gold, (NU) Soldereable Au w/ Ni barrier, (NT) Nickel with Solder
Bare Substrate (Standard), Gold (Optional)
-55°C to +150°C
-65°C to +150°C
10 to 20GHz
1.3:1
100V Max.
±0.5% to ±10%
2Ω to 5kΩ
1
2
SUBSTRATE CHARACTERISTICS
SUBSTRATE
99.6% Alumina
Beryllium Oxide
Aluminum Nitride
Quartz
Soldered or Solderable Gold require a Nickel Barrier
Achieving operating characteristics is dependent on attachment methods in order to minimize parasitics
0.005" - 0.025"
0.010" - 0.025"
0.005” - 0.010”
Available
Thickness
Dielectric
Constant
@ 1MHz
6.7
9.9
9.0
Thermal
Conductivity
W/m• K
140 - 177
1.3
±150 ppm/°C
±25 ppm/°C
300
28
101Ω to 5kΩ
-35dB
-35dB
-35dB
DC to 10GHz
1.2:1
20-40GHz
1.5:1
Current Noise
≤ 100Ω
-30dB
-30dB
-30dB
±25 ppm/°C
±5 ppm/°C
GGB
0.010" - 0.025"
RESISTOR CHARACTERISTICS
RESISTOR FILM
Tatalum Nitride
NiChrome
3.75
-40dB
-30dB
Ta
2
O
5
(Self Passivating)
Passivation
SiO
2
Standard TCR
TCR Optional to:
PART NUMBER DESIGNATION
MSMW
STYLE
MSMW
TYPE
SEE
TABLE
110
SUBSTRATE
A = Alumina
B = BeO
N = AlN
Q = Quartz
3
A
N
3
EXAMPLE: MSMW-110 - AN - 10000F - GGB
MSMW-110 Series, Alumina Substrate, NiChrome Resistor Film, 1kΩ, ±1% Tol., Non-Solderable Gold,
Gold Backside
Quartz available as wire bondable only
ISO 9001 CERTIFIED
20 DAVID ROAD
NORTH ATTLEBORO, MA 02760
EMAIL: msithin@Mini-SystemsInc.com
WEB:
www.Mini-SystemsInc.com
PHONE: 508-695-0203 FAX:508-695-6076
RESISTOR FILM
OHMIC VALUE
T = Tantalum Nitride
5-Digit Number:
N = NiChrome
1st 4 digits are significant
with "R" as decimal point
when required. 5th digit
represents number of zeros.
10000
TOLERANCE
D = ±0.5%
F = ±1%
G = ±2%
J = ±5%
K = ±10%
F
MINI SYSTEMS INC.
13
MADE IN AMERICA
SINCE 1968
8041 Rev. A
THIN FILM DIVISION
D
C
B
A
F
G
NU
NT
NT3
GB
TR
=
=
=
=
=
=
=
=
=
=
=
OPTION
±5ppm/°C
±10ppm/°C
±25ppm/°C
±50ppm/°C
±100ppm/°C
Non-Solderable Gold
Soldereable Au w/ Ni barrier
Nickel w/ Sn62 Solder
Nickel w/ SAC305 Solder
Gold Back
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