|
1N4935G |
1N4936G |
1N4937G |
1N4933G |
Description |
1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 |
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 |
SIGNAL DIODE |
SIGNAL DIODE |
Maker |
LRC |
LRC |
LRC |
LRC |
package instruction |
PLASTIC PACKAGE-2 |
O-PALF-W2 |
PLASTIC PACKAGE-2 |
O-PALF-W2 |
Reach Compliance Code |
unknow |
unknow |
unknow |
unknown |
ECCN code |
EAR99 |
EAR99 |
EAR99 |
EAR99 |
Shell connection |
ISOLATED |
ISOLATED |
ISOLATED |
ISOLATED |
Configuration |
SINGLE |
SINGLE |
SINGLE |
SINGLE |
Diode component materials |
SILICON |
SILICON |
SILICON |
SILICON |
Diode type |
RECTIFIER DIODE |
RECTIFIER DIODE |
RECTIFIER DIODE |
RECTIFIER DIODE |
Maximum forward voltage (VF) |
1.2 V |
1.2 V |
1.2 V |
1.2 V |
JEDEC-95 code |
DO-41 |
DO-41 |
DO-41 |
DO-41 |
JESD-30 code |
O-PALF-W2 |
O-PALF-W2 |
O-PALF-W2 |
O-PALF-W2 |
Maximum non-repetitive peak forward current |
30 A |
30 A |
30 A |
30 A |
Number of components |
1 |
1 |
1 |
1 |
Number of terminals |
2 |
2 |
2 |
2 |
Maximum operating temperature |
150 °C |
150 °C |
150 °C |
150 °C |
Minimum operating temperature |
-50 °C |
-50 °C |
-50 °C |
-50 °C |
Maximum output current |
1 A |
1 A |
1 A |
1 A |
Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
Package shape |
ROUND |
ROUND |
ROUND |
ROUND |
Package form |
LONG FORM |
LONG FORM |
LONG FORM |
LONG FORM |
Maximum repetitive peak reverse voltage |
200 V |
400 V |
600 V |
50 V |
Maximum reverse recovery time |
0.15 µs |
0.15 µs |
0.15 µs |
0.15 µs |
surface mount |
NO |
NO |
NO |
NO |
Terminal form |
WIRE |
WIRE |
WIRE |
WIRE |
Terminal location |
AXIAL |
AXIAL |
AXIAL |
AXIAL |