IC,SRAM,1KX4,CMOS,DIP,18PIN,CERAMIC
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Objectid | 101192477 |
| Reach Compliance Code | not_compliant |
| ECCN code | 3A001.A.2.C |
| Maximum access time | 320 ns |
| I/O type | COMMON |
| JESD-30 code | R-XDIP-T18 |
| JESD-609 code | e0 |
| memory density | 4096 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 4 |
| Number of terminals | 18 |
| word count | 1024 words |
| character code | 1000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 1KX4 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP18,.3 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| power supply | 5 V |
| Certification status | Not Qualified |
| Filter level | 38535Q/M;38534H;883B |
| Maximum standby current | 0.000025 A |
| Minimum standby current | 2 V |
| Maximum slew rate | 0.014 mA |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| HM1-6514-8 | HM1-6514S-9+ | HM1-6514-5 | |
|---|---|---|---|
| Description | IC,SRAM,1KX4,CMOS,DIP,18PIN,CERAMIC | IC,SRAM,1KX4,CMOS,DIP,18PIN,CERAMIC | HM1-6514-5 |
| Is it Rohs certified? | incompatible | incompatible | incompatible |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant |
| ECCN code | 3A001.A.2.C | EAR99 | EAR99 |
| Maximum access time | 320 ns | 120 ns | 370 ns |
| I/O type | COMMON | COMMON | COMMON |
| JESD-30 code | R-XDIP-T18 | R-XDIP-T18 | R-XDIP-T18 |
| JESD-609 code | e0 | e0 | e0 |
| memory density | 4096 bit | 4096 bit | 4096 bit |
| Memory IC Type | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| memory width | 4 | 4 | 4 |
| Number of terminals | 18 | 18 | 18 |
| word count | 1024 words | 1024 words | 1024 words |
| character code | 1000 | 1000 | 1000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C | 85 °C | 70 °C |
| Minimum operating temperature | -55 °C | -40 °C | - |
| organize | 1KX4 | 1KX4 | 1KX4 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE |
| Package body material | CERAMIC | CERAMIC | CERAMIC |
| encapsulated code | DIP | DIP | DIP |
| Encapsulate equivalent code | DIP18,.3 | DIP18,.3 | DIP18,.3 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | IN-LINE |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL |
| power supply | 5 V | 5 V | 5 V |
| Maximum standby current | 0.000025 A | 0.000015 A | 0.0002 A |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V |
| surface mount | NO | NO | NO |
| technology | CMOS | CMOS | CMOS |
| Temperature level | MILITARY | INDUSTRIAL | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal pitch | 2.54 mm | 2.54 mm | 2.54 mm |
| Terminal location | DUAL | DUAL | DUAL |
| Certification status | Not Qualified | - | Not Qualified |
| Minimum standby current | 2 V | 2 V | - |
| Maximum slew rate | 0.014 mA | 0.031 mA | - |
| package instruction | - | DIP, DIP18,.3 | DIP, DIP18,.3 |
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