MSTC110
Thyristor/Diode Modules
V
RRM
/ V
DRM
800 to 1600V
I
TAV
110Amp
Applications
Power Converters
Lighting Control
DC Motor Control and Drives
Heat and temperature control
Circuit
1
2
3
6
7
5
4
Features
MSTC
International standard package
High Surge Capability
Glass passivated chip
Simple Mounting
Heat transfer through aluminum oxide DCB
ceramic isolated metal baseplate
Module Type
TYPE
MSTC110-08
MSTC110-12
MSTC110-16
V
RRM
800V
1200V
1600V
V
RSM
900V
1300V
1700V
Maximum Ratings
Symbol
I
TAV
I
TSM
it
Visol
Tvj
Tstg
Mt
Ms
di/dt
dv/dt
a
Weight
To terminals(M5)
To heatsink(M6)
T
VJ
= T
VJM
, 2/3V
DRM
,I
G
=500mA
Tr<0.5us,tp>6us
T
J
= T
VJM
,2/3V
DRM
, linear voltage rise
Maximum allowable acceleration
Module(Approximately)
2
Conditions
Sine 180 ;Tc=85℃
T
VJ
=45℃ t=10ms, sine
T
VJ
=125℃ t=10ms, sine
T
VJ
=45℃ t=10ms, sine
T
VJ
=125℃ t=10ms, sine
a.c.50HZ;r.m.s.;1min
o
Values
110
2250
1900
25000
18000
3000
-40 to 130
-40 to 125
3±15%
5±15%
150
1000
50
100
Units
A
A
A2s
V
℃
℃
Nm
Nm
A/us
V/us
m/s
g
2
Thermal Characteristics
Symbol
Rth(j-c)
Rth(c-s)
Document Number: MSTC110
Sep.06,2013
Conditions
Cont.;per thyristor / per module
per thyristor / per module
Values
0.28/0.14
0.2/0.1
Units
℃/W
℃/W
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1
MSTC110
Electrical Characteristics
Symbol
V
TM
I
RRM
/I
DRM
V
TO
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
tgd
tq
Conditions
T=25℃ I
TM
=300A
T
VJ
=T
VJM
,V
R
=V
RRM
,V
D
=V
DRM
For power-loss calculations only (T
VJ
=125℃)
T
VJ
=T
VJM
T
VJ
=25℃ , V
D
=6V
T
VJ
=25℃ , V
D
=6V
T
VJ
=125℃ , V
D
=2/3V
DRM
T
VJ
=125℃ , V
D
=2/3V
DRM
T
VJ
=25℃ , R
G
= 33 Ω
T
VJ
=25℃ , V
D
=6V
T
VJ
=25℃, I
G
=1A, di
G
/dt=1A/us
T
VJ
=T
VJM
Min.
Values
Typ.
Max.
1.72
20
0.9
2
3
150
0.25
6
Units
V
mA
V
mΩ
V
mA
V
mA
mA
mA
us
us
300
150
1
100
600
250
Document Number: MSTC110
Sep.06,2013
www.smsemi.com
2
MSTC110
Performance Curves
200
W
rec.120
sin.180
DC
rec.60
rec.30
200
A
160
DC
150
120
sin.180
rec.120
100
80
50
40
P
TAV
0
0
I
TAV
50
100
A 150
I
TAVM
0
0
rec.60
rec.30
Fig1. Power dissipation
0.50
℃/
W
Z
th(j-
S
)
2500
A
Fig2.Forward Current Derating Curve
50HZ
Tc
150
℃
50
100
℃
130
0.25
Z
th(j-
C
)
1250
0
0.001
t 0.01
0.1
1
10
S 100
0
10
100
ms 1000
Fig3. Transient thermal impedance
300
A
Typ
.
Fig4. Max Non-Repetitive Forward Surge
Current
200
125
℃
max
.
100
25
℃
I
T
0
0
V
TM
0.5
1.0
1.5
V 2.0
Fig5. Forward Characteristics
Document Number: MSTC110
Sep.06,2013
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3
MSTC110
100
V
20V;20
Ω
10
V
GT
∧
1/2·MSCT110
15
10
50
W
(8
0W
(0
.1
m
0W
(0
s)
s)
m
.5
m
s)
1
T
vj
25℃
V
GD125
℃
I
GD125
℃
I
G
0.01
-40℃
PG(tp)
125℃
V
G
I
GT
0.1
1.1 0.001
0.1
1
10
A 100
Fig6. Gate trigger Characteristics
Package Outline Information
CASE: T1
×
Dimensions in mm
Document Number: MSTC110
Sep.06,2013
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