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SC802-09

Description
1 A, 90 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size83KB,3 Pages
ManufacturerFUJI
Websitehttp://www.fujielectric.co.jp/eng/fdt/scd/
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SC802-09 Overview

1 A, 90 V, SILICON, SIGNAL DIODE

SC802-09
(1A)
SCHOTTKY BARRIER DIODE
3
±0.2
(90V / 1A )
Outline drawings, mm
Marking
2.5
±0.2
2.6
±0.2
1.35
±0.4
2
MIN.
5.1
-0.1
+0.4
1.35
±0.4
1.2
±0.2
Features
Surface-mount
device
Low V
F
Super high speed switching
High reliability by planer design
Marking
ED
Applications
High speed switching
Cathode mark
Code
Lot. No
Maximum ratings and characteristics
Absolute maximum ratings
Item
Repetitive peak reverse voltage
Non-repetitive
peak reverse voltage
Average output current
Surge
current
Operating junction temperature
Storage temperature
Symbol
V
RRM
V
RSM
I
o
I
FSM
T
j
T
stg
tw=500ns, duty=
1/40
Resistive load
Tl=110°C
Sine wave
10ms
Conditions
Rating
90
100
1.0*
30
-40 to +150
-40 to +150
Unit
V
V
A
A
°C
°C
*
Mounted on printed cirrcuit boad (15 x 15mm)
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Forward voltage drop
Reverse current
Thermal resistance
Symbol
V
FM
I
RRM
R
th(j-l)
Conditions
I
FM
=1A
V
R
=V
RRM
Junction
to lead
Max.
0.85
2.0
15*
Unit
V
mA
°C/W
0.1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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