FKN2L60
FKN2L60
Application Explanation
•
•
•
•
Switching mode power supply, light dimmer, electric flasher unit, hair drier
TV sets, stereo, refrigerator, washing machine
Electric blanket, solenoid driver, small motor control
Photo copier, electric tool
3
1: T
1
2: Gate
3: T
2
2
TO-92
1 2 3
1
Bi-Directional Triode Thyristor Planar Silicon
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
DRM
Parameter
Repetitive Peak Off-State Voltage
(Note1 )
Rating
600
Units
V
Symbol
I
T (RMS)
I
TSM
I
2
t
di/dt
P
GM
P
G (AV)
V
GM
I
GM
T
J
T
STG
Parameter
RMS On-State Current
Surge On-State Current
I
2
t for Fusing
Critical Rate of Rise of On-State Current
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature
Conditions
Commercial frequency, sine full wave 360°
conduction, Tc=65℃
Sinewave 1 full cycle, peak value,
non-repetitive
50Hz
60Hz
Rating
1.5
9
10
0.4
50
1
0.1
6
0.5
- 40 ~ 125
- 40 ~ 125
Units
A
A
A
A
2
s
A/µs
W
W
V
A
°C
°C
Value corresponding to 1 cycle of halfwave,
surge on-state current, tp=10ms
I
G
= 2x I
GT
, tr
≤
100ns
Thermal Characteristic
Symbol
R
th(J-C)
Parameter
Thermal Resistance
Test Condition
Junction to case
(Note 4)
Min.
-
Typ.
-
Max.
40
Units
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, April 2004
FKN2L60
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
I
DRM
V
TM
Parameter
Repetieive Peak Off-State Current
On-State Voltage
I
V
GT
Gate Trigger Voltage
(Note 2)
II
III
I
I
GT
V
GD
I
H
I
L
dv/dt
(dv/dt)
C
Gate Trigger Current
(Note 2)
Gate Non-Trigger Voltage
Holding Current
Latching Current
Critical Rate of Rise of
Off-State Voltag
Critical-Rate of Rise of Off-State
Commutating Voltage
(Note 3)
I, III
II
V
DRM
= Rated, T
j
= 125°C,
Exponential Rise
II
III
T
J
=125°C, V
D
=1/2V
DRM
V
D
= 12V, I
TM
= 1A
V
D
= 12V, I
G
= 1.2I
GT
V
D
=12V, R
L
=20Ω
V
D
=12V, R
L
=20Ω
Test Condition
V
DRM
applied
T
C
=25°C, I
TM
=3A
Instantaneous measurement
T2(+), Gate (+)
T2(+), Gate (-)
T2(-), Gate (-)
T2(+), Gate (+)
T2(+), Gate (-)
T2(-), Gate (-)
Min.
-
-
-
-
-
-
-
-
0.2
-
-
-
500
5
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
20
1.6
1.5
1.5
1.5
5
5
5
-
10
10
10
-
-
Units
µA
V
V
V
V
mA
mA
mA
V
mA
mA
mA
V/µs
V/µs
Notes:
1. Gate Open
2. Measurement using the gate trigger characteristics measurement circuit
3. The critical-rate of rise of the off-state commutating voltage is shown in the table below
4. Case temperature is measured at the T2 terminal 1.5mm away from the molded case.
V
DRM
(V)
FKN2L60
Test Condition
1. Junction Temperature
T
J
=125°C
2. Rate of decay of on-state
commutating current
(di/dt)
C
= - 0.5A/ms
3. Peak off-state voltage
V
D
= 400V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
(di/dt)
C
Main Current
Time
Time
Main Voltage
(dv/dt)
C
Time
V
D
Quadrant Definitions for a Triac
T2 Positive
+
(+) T2
(+) T2
Quadrant II
(-) I
GT
GATE
T1
(+) I
GT
GATE
T1
Quadrant I
I
GT
-
(-) T2
(-) T2
+ I
GT
Quadrant III
(-) I
GT
GATE
T1
(+) I
GT
GATE
T1
Quadrant IV
-
T2 Negative
©2004 Fairchild Semiconductor Corporation
Rev. A, April 2004
FKN2L60
Typical Curves
12
12
11
SURGE ON-STATE CURRENT [A]
10
10
9
8
7
6
5
4
3
2
1
60Hz
ON-STATE CURRENT [A]
25 C
8
o
6
125 C
o
50Hz
4
2
0
0.0
0
0.5
1.0
1.5
2.0
2.5
3.0
1
10
100
ON-STATE VOLTAGE [V]
NUMBER OF CYCLES AT 50Hz AND 60Hz
Figure 1. Maximum On-state Characteristics
Figure 2. Rated Surge On-state Current
V
GM
=10V
NORMALIZED GATE TRIGGER CURRENT [%]
100
1000
I
Ⅱ
, I
Ⅲ
GATE VOLTAGE [V]
10
P
GM
=3W
V
GT
=1.5V
100
I
Ⅰ
1
P
G(AV)
=0.3W
I
GT
=10mA
0.1
1
10
V
GD
=0.2V
100
1000
I
GM
=1.6A
10
-60
-40
-20
0
20
40
60
80
o
100
120
140
GATE CURRENT [mA]
JUNCTION TEMPERATURE [ C]
Figure 3. Gate Characteristics
Figure 4. Gate Trigger Current vs Tj
NORMALIZED GATE TRIGGER VOLTAGE [%]
1000
1000
TRANSIENT THERMAL IMPEDANCE
100
10
100
[ C/W]
V
GT
Ⅱ
, V
GT
Ⅲ
1
V
GT
Ⅰ
o
0.1
0.01
10
-60
-40
-20
0
20
40
60
80
o
100
120
140
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
1000
JUNCTION TEMPERATURE [ C]
CONDUCTION TIME [sec]
Figure 5. Gate Trigger Voltage vs Tj
Figure 6. Transient Thermal Impedance
©2004 Fairchild Semiconductor Corporation
Rev. A, April 2004
FKN2L60
Typical Curves
(Continues)
140
4.0
MAXIMUM ALLOWABLE CASE, AMBIENT
o
TEMPERATURE T
C
MAX, T
a
MAX [ C/W]
ON-STATE POWER DISSIPATION [W]
1.0
1.2
1.4
1.6
1.8
2.0
120
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
T
C
100
80
60
T
a
40
20
0
0.0
0.2
0.4
0.6
0.8
0.2
0.4
0.6 0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6 2.8
3.0
ON-STATE CURRENT [A]
RMS ON-STATE CURRENT [A]
Figure 7. Allowable Case, Ambient Temperature
vs Rms On-state Current
Figure 8. Maximum On-state Power Dissipation
NORMALIZED REPETIVITE OFF-STATE CURRENT [%]
10
5
1000
10
4
NORMALIZED HOLDING CURRENT [%]
140
TYPICAL EXAMPLE
100
10
3
10
2
-60
-40
-20
0
20
40
60
80
o
100
120
10
-60
-40
-20
0
20
40
60
80
o
100
120
140
JUNCTION TEMPERATURE [ C]
JUNCTION TEMPERATURE [ C]
Figure 9. Repetitive Peak Off-state Current
vs Junction Temperature
Figure 10. Holding Current vs
Junction Temperature
160
1000
NORMALIZED BREAKOVER VOLTAGE [%]
140
120
100
80
60
40
20
0
-60
NORMALIZED GATE TRIGGER CURRENT [%]
TYPICAL EXAMPLE
I
Ⅱ
I
Ⅲ
100
I
Ⅰ
-40
-20
0
20
40
60
80
o
100
120
140
10
1
10
100
JUNCTION TEMPERATURE [ C]
GATE CURRENT PULSE WIDTH [
µ
s]
Figure 11. Breakover Voltage vs
Junction Temperature
Figure 12. Gate Trigger Current vs
Gate Current Pulse Width
©2004 Fairchild Semiconductor Corporation
Rev. A, April 2004
FKN2L60
Typical Curves
(Continues)
160
NORMALIZED BREAKOVER VOLTAGE [%]
140
120
100
80
60
40
20
TYPICAL EXAMPLE
Tj=125
℃
Ⅰ
QUADRANT
Ⅲ
QUADRANT
10
1
10
2
10
3
10
4
RATE OF RISE OF-STATE VOLTAGE [V/us]
Figure 13. Breakover Voltage vs
Rate of Rise of Off-state Voltage
©2004 Fairchild Semiconductor Corporation
Rev. A, April 2004
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