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MBR2080CT

Description
20 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size250KB,2 Pages
ManufacturerSHUNYE
Websitehttp://www.shunyegroup.com.cn/
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MBR2080CT Overview

20 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB

MBR2070CT - - MBR20100CT
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE
- 70
to
100Volts
FORWARD CURRENT
- 20.0
Amperes
FEATURES
High surge capacity.
For use in low voltage, high frequency inverters, free
111
wheeling, and polarity protection applications.
Metal silicon junction, majority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
TO-220AB
MECHANICAL DATA
Case:JEDEC TO-220AB,molded plastic body
Terminals:Leads, solderable per MIL-STD-750,
11
Method 2026
Polarity: As marked
Weight: 0.08 ounce, 2.24 grams
Position: Any
½½
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
MBR2070CT MBR2080CT MBR2090CT MBR20100CT UNITS
Maximum recurrent peak reverse voltage
Maximum w orking peak reverse voltage
Maximum DC blocking voltage
Maximum average forw ard total device1
111rectified
current
@ T
C
= 133
Peak forw ard surge current 8.3 ms single half
b
sine-w ave superimposed on rated load
Maximum forw ard
voltage per leg
(NOTE 1)
(I
F
=10A,T
C
=25 )
(I
F
=10A,T
C
=125 )
(I
F
=20A,T
C
=25 )
(I
F
=20A,T
C
=125 )
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=125
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
70
49
70
80
56
80
20.0
90
63
90
100
70
100
V
V
V
A
150.0
0.85
A
V
F
0.70
0.95
0.85
V
I
R
C
T
T
J
T
STG
0.1
6.0
400
-
55
---- + 150
-
55
---- + 175
mA
pF
Maximum junction capacitance
(NOTE2)
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2.
V
R
=5V
DC
,(test signal range 100KHz to 1MHz
www.shunyegroup.com.cn

MBR2080CT Related Products

MBR2080CT MBR2070CT
Description 20 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB 20 A, 70 V, SILICON, RECTIFIER DIODE, TO-220AB
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