2S2M, 2S4M
The 2S2M and 2S4M are P-gate fully diffused mold SCRs
with an average on-current of 2 A. The repeat peak off-voltages
(and reverse voltages) are 200 V and 400 V.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• This transistor is designed for high-speed switching and is
deal for use in commercial frequencies, high-frequency pulse
applications, and inverter applications.
• This transistor features a small and lightweight package and
is easy to handle even on the mounting surface due to its
TO-202AA dimensions. Processing of lead wires and
heatsink (tablet) using jigs is also possible.
• Employs flame-retardant epoxy resin (UL94V-0).
APPLICATIONS
Consumer electronic euipments, ignitors of devices for light
indutry, inverter, and solenoid valve drives
Electrode connection
<1>Cathode
<2>Anode
<3>Gate
Standard weight: 1.4
*TC test bench-mark
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Non-repetitive peak reverse voltage
Non-repetitive peak off-state voltage
Repetitive peak reverse voltage
Repetitive peak off-voltage
Average on-state current
Surge on-state current
High-frequency peak on-state current
Fusing current
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward current
Peak gate reverse voltage
Junction temperature
Storage temperature
Symbol
V
RSM
V
DSM
V
RRM
V
DRM
I
T(AV)
I
TSM
I
TRM
∫
i
t
dt
dI
T
/dt
P
GM
P
G(AV)
I
FGM
V
RGM
T
j
T
stg
2
2S2M
2S4M
Ratings
V
V
V
V
A
A
A
A
2
s
A/
µ
s
W
W
A
V
°C
°C
Unit
R
GK
= 1 kΩ
R
GK
= 1 kΩ
R
GK
= 1 kΩ
R
GK
= 1 kΩ
Refer to Figure 6 snd 7.
300
500
300
500
200
400
200
400
2 (Tc = 77°C, Single half-wave,
θ
= 180°)
20 (f = 50 Hz, Sine half-wave, 1 cycle)
15 (Tc = 65°C, f = 10 kp.p.s, t
p
= 10
µ
s)
1.6 (1 ms≤t≤10 ms)
50
0.5 (f≥50 Hz, Duty≤10%)
0.1
0.2 (f≥50 Hz, Duty≤10%)
6
−40
to +125
−55
tp +150
Refer to Figure 2.
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