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GALI-4

Description
Monolithic Amplifier DC-4 GHz
CategoryWireless rf/communication    Radio frequency and microwave   
File Size155KB,4 Pages
ManufacturerMini-Circuits
Websitehttps://www.minicircuits.com
Download Datasheet Parametric View All

GALI-4 Overview

Monolithic Amplifier DC-4 GHz

GALI-4 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionTO-243
Reach Compliance Codeunknow
Other featuresHIGH RELIABILITY
Characteristic impedance50 Ω
structureCOMPONENT
Gain11 dB
Maximum input power (CW)20 dBm
JESD-609 codee0
Installation featuresSURFACE MOUNT
Number of functions1
Number of terminals3
Maximum operating frequency4000 MHz
Minimum operating frequency
Maximum operating temperature85 °C
Minimum operating temperature-45 °C
Package body materialPLASTIC/EPOXY
Encapsulate equivalent codeTO-243
power supply4.6 V
RF/Microwave Device TypesWIDE BAND LOW POWER
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Maximum voltage standing wave ratio1.7
Base Number Matches1
Surface Mount
Monolithic Amplifier
Product Features
• InGaP HBT microwave amplifier
• Miniature SOT-89 package
• Internally Matched to 50 Ohms
• Frequency range, DC to 4 GHz
• Output power, 17.5 dBm typ.
• Excellent package for heat dissipation, exposed metal bottom
• Low thermal resistance for high reliability
• Aqueous washable
• Protected by US Patent 6,943,629
DC-4 GHz
Gali 4+
CASE STYLE: DF782
+RoHS Compliant
The +Suffix identifies RoHS Compliance. See our web site
for RoHS Compliance methodologies and qualifications
Typical Applications
• Cellular
• PCS
• Communication receivers & transmitters
General Description
Gali 4+ (RoHS compliant) is a wideband amplifier offering high dynamic range. Lead finish is SnAgNi. It
has repeatable performance from lot to lot, and is enclosed in a SOT-89 package. It uses patented Tran-
sient Protected Darlington configuration and is fabricated using InGaP HBT technology. Expected MTBF
is 4,000 years at 85°C case temperature. Gali 4+ is designed to be rugged for ESD and supply switch-on
transients.
simplified schematic and pin description
RF-OUT and DC-IN
RF IN
3 RF-OUT & DC-IN
4
2 GROUND
1 RF-IN
GROUND
Function
RF IN
Pin Number
1
Description
RF input pin. This pin requires the use of an external DC blocking capacitor chosen
for the frequency of operation.
RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking
capacitor is necessary for proper operation. An RF choke is needed to feed DC bias
without loss of RF signal due to the bias connection, as shown in “Recommended
Application Circuit”.
Connections to ground. Use via holes as shown in “Suggested Layout for PCB
Design” to reduce ground path inductance for best performance.
RF-OUT and DC-IN
3
GND
2,4
Notes
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
www.minicircuits.com
P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Mini-Circuits
®
REV. S
M151107
D60129
EE-7974Q
GALI-4+
RS/YB/FL/AM
150723
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