AP18P10AGH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Lower Gate Charge
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
▼
RoHS Compliant & Halogen-Free
G
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
-100V
140mΩ
-12A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters. The through-hole version (AP18P10AGJ) is
available for low-profile applications.
G
D
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Rating
-100
+30
-12
-7.4
-48
39
Units
V
V
A
A
A
W
W
℃
℃
Total Power Dissipation
Total Power Dissipation
3
2
-55 to 150
-55 to 150
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value
3.2
62.5
110
Units
℃/W
℃/W
℃/W
1
201501133
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
AP18P10AGH/J-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
2
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-10V, I
D
=-8A
V
DS
=V
GS
, I
D
=-250uA
V
DS
= -10V, I
D
= -8A
V
DS
=-80V, V
GS
=0V
V
GS
= +30V, V
DS
=0V
I
D
=-8A
V
DS
=-80V
V
GS
=-10V
V
DS
=-50V
I
D
=-8A
R
G
=3.3Ω
V
GS
=-10V
V
GS
=0V
V
DS
=-25V
f=1.0MHz
f=1.0MHz
Min.
-100
-
-2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
13
-
-
35
4.5
14.5
9
16
42
34
115
95
7
Max. Units
-
140
-4
-
-25
+100
55
-
-
-
-
-
-
-
-
14
V
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
1380 2200
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=-8A, V
GS
=0V
I
S
=-8A, V
GS
=0V,
dI/dt=-100A/µs
Min.
-
-
-
Typ.
-
55
155
Max. Units
-1.3
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP18P10AGH/J-HF
40
30
T
C
= 25
o
C
-I
D
, Drain Current (A)
30
-I
D
, Drain Current (A)
-10V
-8.0V
-7.0V
-6.0V
T
C
=150
o
C
-10V
-8.0V
-7.0V
-6.0V
V
G
= -5.0V
20
20
V
G
= - 5.0V
10
10
0
0
4
8
12
16
0
0
4
8
12
16
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.4
I
D
= -1mA
2.0
I
D
= -8A
V
G
= -10V
Normalized R
DS(ON)
Normalized BV
DSS
1.1
1.6
1
1.2
0.9
0.8
0.8
-50
0
50
100
150
0.4
-50
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature ( C)
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
12
2.0
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
I
D
= -250uA
10
1.5
8
6
T
j
=150
o
C
T
j
=25
o
C
Normalized V
GS(th)
-I
S
(A)
1.0
4
0.5
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.0
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP18P10AGH/J-HF
f=1.0MHz
12
2000
V
DS
= - 80 V
I
D
= -8A
10
-V
GS
, Gate to Source Voltage (V)
1600
C
iss
8
6
C (pF)
1200
800
4
400
2
C
oss
C
rss
0
0
10
20
30
40
0
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
Operation in this area
limited by R
DS(ON)
100us
10
0.2
-I
D
(A)
1ms
0.1
0.1
0.05
P
DM
1
T
C
=25
o
C
Single Pulse
0
0.1
1
10
10ms
100ms
DC
t
0.02
0.01
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
0.01
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
16
16
V
DS
= -5V
-I
D
, Drain Current (A)
-I
D
, Drain Current (A)
T
j
=25 C
T
j
= -40
o
C
0
0
2
4
6
8
0
25
50
75
100
125
150
12
12
8
8
4
T
j
=150
o
C
o
4
-V
GS
, Gate-to-Source Voltage (V)
T
C
, Case Temperature (
o
C )
Fig 11. Transfer Characteristics
Fig 12. Drain Current v.s. Case Temperature
4
AP18P10AGH/J-HF
MARKING INFORMATION
TO-251
18P10AGJ
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
TO-252
18P10AGH
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
Embedded System
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