Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4530AL
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time.
CONDITIONS
V
BE
= 0
TYP.
-
-
-
-
-
-
9
8
0.20
0.12
MAX.
1500
800
16
40
125
3.0
-
-
0.26
-
UNIT
V
V
A
A
W
V
A
A
µs
µs
T
mb
≤
25 ˚C
I
C
= 10 A; I
B
= 2.22A
f = 32 kHz
f = 90 kHz
I
Csat
= 9.0 A; f = 32 kHz
I
Csat
= 8.0 A; f = 90 kHz
PINNING - SOT430
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
SYMBOL
c
b
1
2
3
heat collector
sink
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
16
40
10
15
125
150
150
UNIT
V
V
A
A
A
A
W
˚C
˚C
T
mb
≤
25 ˚C
April 1999
1
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4530AL
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
-
in free air
TYP.
-
35
MAX.
1.0
-
UNIT
K/W
K/W
STATIC CHARACTERISTICS
T
mb
= 25 ˚C unless otherwise specified
SYMBOL
I
CES
I
CES
BV
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
PARAMETER
Collector cut-off current
1
CONDITIONS
MIN.
-
-
7.5
800
-
0.83
-
4.8
TYP.
-
-
12.8
-
0.92
12
6.6
MAX.
1.0
2.0
-
3.0
1.01
-
8.5
UNIT
mA
mA
V
V
V
V
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
= 125 ˚C
Base-emitter breakdown voltage
I
B
= 1 mA
Collector-emitter breakdown voltage I
B
= 0 A;I
C
= 100 mA;
L = 25 mH
Collector-emitter saturation voltage I
C
= 10 A; I
B
= 2.22 A
Base-emitter saturation voltage
I
C
= 10 A; I
B
= 2.22 A
DC current gain
I
C
= 1 A; V
CE
= 5 V
I
C
= 10 A; V
CE
= 5 V
DYNAMIC CHARACTERISTICS
T
mb
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
Switching times (32 kHz line
deflection dynamic test circuit).
Turn-off storage time
Turn-off fall time
Switching times (90 kHz line
deflection dynamic test circuit).
Turn-off storage time
Turn-off fall time
CONDITIONS
I
Csat
= 9.0 A; I
B1
= 1.8 A; (I
B2
= -4.5 A)
3.0
0.20
I
Csat
= 8 A;I
B1
= 1.6 A; (I
B2
= -4.0 A)
2
0.12
-
-
µs
µs
4.0
0.26
µs
µs
TYP.
MAX.
UNIT
t
s
t
f
t
s
t
f
IC / mA
+ 50v
100-200R
250
Horizontal
Oscilloscope
Vertical
100R
6V
30-60 Hz
1R
200
100
0
VCE / V
min
VCEOsust
Fig.1. Test circuit for V
CEOsust
.
Fig.2. Oscilloscope display for V
CEOsust
.
1
Measured with half sine-wave voltage (curve tracer).
April 1999
2
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4530AL
TRANSISTOR
IC
DIODE
ICsat
100 hFE
VCE = 1V
t
- - -Tj = 85 C
Tj = 25 C
IB
IBend
t
10us
13us
32us
10
VCE
1
0.01
t
0.1
1
10
IC / A
100
Fig.3. Switching times waveforms.
Fig.6. High and low DC current gain.
ICsat
90 %
IC
100
hFE
VCE = 5V
- - -Tj = 85 C
Tj = 25 C
10 %
tf
ts
IB
IB1
t
10
t
1
0.01
- IB2
0.1
1
10
IC / A
100
Fig.4. Switching times definitions.
Fig.7. High and low DC current gain.
+ 150 v nominal
adjust for ICsat
1 VBEsat /V
- - -Ths = 85 C
Ths = 25 C
0.9
IC = 10 A
Lc
IC = 8 A
0.8
IBend
LB
T.U.T.
Cfb
0.7
-VBB
0.6
0
1
2
3
IB / A
4
Fig.5. Switching times test circuit.
Fig.8. Typical base-emitter saturation voltage.
April 1999
3
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4530AL
10
VCEsat / V
10
- - -Tj = 85 C
Tj = 25 C
Zth / (K/W)
BU4530AL
1
1
0.5
0.1
IC / IB = 5
0.2
0.1
0.05
0.02
P
D
tp
t
D= p
T
T
1E-05
1E-03
t/s
1E-01
t
1E+01
0.1
0.01
0.01
0.1
1
10
IC / A
100
0.001
1E-07
Fig.9. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
ts/tf / us
Fig.12. Transient thermal impedance.
10
10
Ic(sat) (A)
8
8
6
6
4
4
2
2
0
0
0
0.5
1
1.5
2
2.5
IB / A
3
0
20
40
60
frequency (kHz)
80
100
Fig.10. Typical collector storage and fall time.
I
C
=9 A; T
j
= 85˚C; f = 32kHz
Normalised Power Derating
with heatsink compound
Fig.13. I
Csat
during normal running vs. frequency of
operation for optimum performance
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
0
20
40
60
80
Ths / C
100
120
140
Fig.11. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25˚C
April 1999
4
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4530AL
MECHANICAL DATA
Dimensions in mm
Net Mass: 9 g
20.5 max
3.1
3.53
4.06
6.17
4.06
25.5
26.5
22.53
22.63
2.39
2.45
19.5
min
18.16
3.5 max
0.8
1.35
0.4 M
5.45 5.45
2.99
2.09
3.13
3.23
8.53
1.92
seating
plane
3.0
5.3 max
3.0
1.0 max
3.0 max
Fig.14. SOT430; pin 2 connected to mounting base.
April 1999
5
Rev 1.100
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