V826764B24SBIX-C0 datasheet, PDF

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V826764B24SBIX-C0: DescriptionCache DRAM Module, 64MX64, 0.7ns, CMOS, PDMA200; Categorystorage storage; File Size198KB，14 Pages; ManufacturerProMOS Technologies Inc; Environmental Compliance

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V826764B24SBIX-C0 Overview

Cache DRAM Module, 64MX64, 0.7ns, CMOS, PDMA200

V826764B24SBIX-C0 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Objectid	1126060289
package instruction	DIMM, DIMM200,24
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	0.7 ns
Maximum clock frequency (fCLK)	166 MHz
I/O type	COMMON
JESD-30 code	R-PDMA-N200
memory density	4294967296 bit
Memory IC Type	CACHE DRAM MODULE
memory width	64
Number of terminals	200
word count	67108864 words
character code	64000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64MX64
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIMM
Encapsulate equivalent code	DIMM200,24
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	8192
Maximum slew rate	1.64 mA
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	0.6 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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V826764B24SB

512 MB 200-PIN DDR UNBUFFERED SODIMM

64M x 64

Features

■

JEDEC 200 Pin DDR Unbuffered Small-Outline,

Dual In-Line memory module (SODIMM);

67,108,864 x 64 bit organization.

■

Utilizes High Performance 32M x 16 DDR

SDRAM in TSOP-II Packages

■

Single +2.5V (± 0.2V) Power Supply

■

Single +2.6V (± 0.1V) Power Supply for DDR400

■

Programmable CAS Latency, Burst Length, and

Wrap Sequence (Sequential & Interleave)

■

Auto Refresh (CBR) and Self Refresh

■

All Inputs, Outputs are SSTL-2 Compatible

■

8192 Refresh Cycles every 64 ms

■

Serial Presence Detect (SPD)

■

DDR SDRAM Performance

Component Used -6

-7

Module Speed

-75

-8

Description

The V826764B24SB memory module is

organized 67,108,864 x 64 bits in a 200 pin memory

module. The 64M x 64 memory module uses 8

ProMOS 32M x 16 DDR SDRAM. The x64 modules

are ideal for use in high performance computer

systems where increased memory density and fast

access times are required.

Clock Frequency

166

143

133

125

(PC333) (PC266A) (PC266B) (PC200)

200

(max.) Clock Frequency (max.)

(PC400B)

166

(PC333)

Units

MHz

CLK

Clock Access Time

7.5

LatencyCycle Time CAS Latency = 3

CAS Clock = 2.5

Clock Cycle Time CAS Latency = 2.5

RCD

tRCD parameter

tRP parameter

V826764B24SB Rev. 1.1 April 2006

V826764B24SBIX-C0 Related Products

	V826764B24SBIX-C0	V826764B24SBIW-D3	V826764B24SBIW-C0	V826764B24SBTL-D3
Description	Cache DRAM Module, 64MX64, 0.7ns, CMOS, PDMA200	DDR DRAM Module, 64MX64, 0.7ns, CMOS, GREEN, SODIMM-200	DDR DRAM Module, 64MX64, 0.7ns, CMOS, GREEN, SODIMM-200	Cache DRAM Module, 64MX64, 0.65ns, CMOS, PDMA200
Is it Rohs certified?	conform to	conform to	conform to	incompatible
package instruction	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24
Reach Compliance Code	compliant	compliant	compli	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum access time	0.7 ns	0.7 ns	0.7 ns	0.65 ns
Maximum clock frequency (fCLK)	166 MHz	200 MHz	166 MHz	200 MHz
I/O type	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PDMA-N200	R-XZMA-N200	R-XZMA-N200	R-PDMA-N200
memory density	4294967296 bit	4294967296 bit	4294967296 bi	4294967296 bit
Memory IC Type	CACHE DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	CACHE DRAM MODULE
memory width	64	64	64	64
Number of terminals	200	200	200	200
word count	67108864 words	67108864 words	67108864 words	67108864 words
character code	64000000	64000000	64000000	64000000
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C
organize	64MX64	64MX64	64MX64	64MX64
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	UNSPECIFIED	UNSPECIFIED	PLASTIC/EPOXY
encapsulated code	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM200,24	DIMM200,24	DIMM200,24	DIMM200,24
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	2.5 V	2.6 V	2.5 V	2.6 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192
Maximum slew rate	1.64 mA	1.68 mA	1.64 mA	1.68 mA
Nominal supply voltage (Vsup)	2.5 V	2.6 V	2.5 V	2.6 V
surface mount	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	0.6 mm	0.6 mm	0.6 mm	0.6 mm
Terminal location	DUAL	ZIG-ZAG	ZIG-ZAG	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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