Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4523AX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
8
6.5
0.3
0.14
MAX.
1500
800
11
29
45
3.0
-
-
0.4
-
UNIT
V
V
A
A
W
V
A
A
µs
µs
T
hs
≤
25 ˚C
I
C
= 8 A; I
B
= 2 A
f = 16 kHz
f = 70 kHz
I
Csat
= 8 A; f = 16 kHz
I
Csat
= 6.5 A; f = 70 kHz
PINNING - SOT399
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c
b
1 2 3
case isolated
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
11
29
7
10
7
45
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
T
hs
≤
25 ˚C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
35
MAX.
2.8
-
UNIT
K/W
K/W
1
Turn-off current.
May 1998
1
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4523AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
Repetitive peak voltage from all
three terminals to external
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
-
MAX.
2500
UNIT
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
I
CES
I
CES
I
EBO
BV
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
PARAMETER
Collector cut-off current
2
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
= 125 ˚C
V
EB
= 6 V; I
C
= 0 A
I
B
= 1 mA
I
B
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 8 A; I
B
= 2 A
I
C
= 8 A; I
B
= 2 A
I
C
= 1 A; V
CE
= 5 V
I
C
= 8 A; V
CE
= 5 V
MIN.
-
-
-
7.5
800
-
0.85
-
4.2
TYP.
-
-
-
12.5
-
-
0.95
14
5.8
MAX.
1.0
2.0
100
-
-
3.0
1.1
-
7.3
UNIT
mA
mA
µA
V
V
V
V
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
Switching times (16 kHz line
deflection circuit)
t
s
t
f
Turn-off storage time
Turn-off fall time
Switching times (70 kHz line
deflection circuit)
t
s
t
f
Turn-off storage time
Turn-off fall time
I
Csat
= 6.5 A;I
B1
= 1.3 A
(I
B2
= -3.9 A)
2.3
0.14
-
-
µs
µs
CONDITIONS
I
Csat
= 8.0 A;I
B1
= 1.6 A
(I
B2
= -4.0 A)
4.5
0.30
5.5
0.40
µs
µs
TYP.
MAX.
UNIT
2
Measured with half sine-wave voltage (curve tracer).
May 1998
2
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4523AX
+ 50v
100-200R
IC
TRANSISTOR
DIODE
ICsat
t
IB
IB1
t
Horizontal
Oscilloscope
Vertical
14.2us
2.5us
7.1us
IB2
100R
6V
30-60 Hz
1R
VCE
t
Fig.1. Test circuit for V
CEOsust
.
Fig.4. Switching times waveforms (70 kHz).
IC / mA
ICsat
90 %
IC
250
10 %
200
ts
IB
tf
t
100
IB1
t
0
VCE / V
min
VCEOsust
- IB2
Fig.2. Oscilloscope display for V
CEOsust
.
Fig.5. Switching times definitions.
TRANSISTOR
IC
DIODE
ICsat
+ 150 v nominal
adjust for ICsat
t
Lc
IB
IB1
t
20us
26us
64us
VCE
IB2
IBend
LB
T.U.T.
Cfb
-VBB
t
Fig.3. Switching times waveforms (16 kHz).
Fig.6. Switching times test circuit.
May 1998
3
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4523AX
100
hFE
VCE = 1 V
BU4523AF/X
Ths = 25 C
Ths = 85 C
VBEsat / V
1.2
1.1
1
IC = 8 A
BU4523AF/X
Ths = 25 C
Ths = 85 C
10
0.9
0.8
0.7
IC = 6.5 A
1
0.01
0.1
1
10
IC / A
100
0.6
0
1
2
3
IB / A
4
Fig.7. High and low DC current gain.
Fig.10. Typical base-emitter saturation voltage.
hFE
100
VCE = 5 V
BU4523AF/X
ts/tf / us
10
BU4523AF/X 16kHz
Ths = 25 C
Ths = 85 C
8
ICsat = 8 A
Ths = 85 C
Freq = 16 kHz
ts
6
10
4
2
tf
1
0.01
0.1
1
10
IC / A
100
0
0
1
2
3
IB / A
4
Fig.8. High and low DC current gain.
Fig.11. Typical collector storage and fall time.
I
C
=8 A; T
j
= 85˚C; f = 16kHz
Normalised Power Derating
with heatsink compound
VCEsat / V
10
Ths = 25 C
Ths = 85 C
1
BU4523AF/X
120
110
100
90
80
70
60
50
PD%
0.1
IC/IB = 5
40
30
20
10
0
0.01
0.1
0
1
10
IC / A
100
20
40
60
80
Ths / C
100
120
140
Fig.9. Typical collector-emitter saturation voltage.
Fig.12. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25˚C
May 1998
4
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4523AX
10
Zth / (K/W)
IC / A
30
BU2523
1
0.5
0.2
0.1
0.05
0.02
10
20
0.1
0.01
D=0
0.001
1E-06
P
D
t
p
D=
t
p
T
t
T
0
100
VCE / V
1000
1500
1E-04
1E-02
t/s
1E+00
Fig.13. Transient thermal impedance.
Fig.15. Reverse bias safe operating area. T
j
≤
T
jmax
10
Ic(sat) (A)
VCC
9
8
7
6
LC
5
4
IBend
VCL
LB
T.U.T.
CFB
3
2
1
0
0
10
20
30
50
70
40
60
Horizontal frequency (kHz)
80
90
100
-VBB
Fig.14. Test Circuit RBSOA.
Fig.16. I
Csat
during normal running vs. frequency of
operation for optimum performance
May 1998
5
Rev 1.100
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