HY5DU28822ELT-L datasheet, PDF

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HY5DU28822ELT-L: DescriptionDDR DRAM, 16MX8, 0.8ns, CMOS, PDSO66; Categorystorage storage; File Size268KB，34 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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HY5DU28822ELT-L Overview

DDR DRAM, 16MX8, 0.8ns, CMOS, PDSO66

HY5DU28822ELT-L Parametric

Parameter Name	Attribute value
Objectid	1125504399
package instruction	TSSOP, TSSOP66,.46
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	0.8 ns
Maximum clock frequency (fCLK)	125 MHz
I/O type	COMMON
interleaved burst length	2,4,8
JESD-30 code	R-PDSO-G66
memory density	134217728 bit
Memory IC Type	DDR DRAM
memory width	8
Number of terminals	66
word count	16777216 words
character code	16000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Encapsulate equivalent code	TSSOP66,.46
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	4096
Continuous burst length	2,4,8
Maximum standby current	0.015 A
Maximum slew rate	0.2 mA
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	0.635 mm
Terminal location	DUAL

HY5DU28822ELT-L Related Products

	HY5DU28822ELT-L	HY5DU28422ELT-J	HY5DU28422ELT-L	HY5DU28422ELT-M	HY5DU28422ELT-K	HY5DU28422ELT-H	HY5DU28822ELT-H	HY5DU28822ELT-J
Description	DDR DRAM, 16MX8, 0.8ns, CMOS, PDSO66	DDR DRAM, 32MX4, 0.7ns, CMOS, PDSO66	DDR DRAM, 32MX4, 0.8ns, CMOS, PDSO66	DDR DRAM, 32MX4, 0.75ns, CMOS, PDSO66	DDR DRAM, 32MX4, 0.75ns, CMOS, PDSO66	DDR DRAM, 32MX4, 0.75ns, CMOS, PDSO66	DDR DRAM, 16MX8, 0.75ns, CMOS, PDSO66	DDR DRAM, 16MX8, 0.7ns, CMOS, PDSO66
package instruction	TSSOP, TSSOP66,.46	TSSOP, TSSOP66,.46	TSSOP, TSSOP66,.46	TSSOP, TSSOP66,.46	TSSOP, TSSOP66,.46	TSSOP, TSSOP66,.46	TSSOP, TSSOP66,.46	TSSOP, TSSOP66,.46
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
Maximum access time	0.8 ns	0.7 ns	0.8 ns	0.75 ns	0.75 ns	0.75 ns	0.75 ns	0.7 ns
Maximum clock frequency (fCLK)	125 MHz	166 MHz	125 MHz	133 MHz	133 MHz	133 MHz	133 MHz	166 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
interleaved burst length	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8
JESD-30 code	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66
memory density	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit
Memory IC Type	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
memory width	8	4	4	4	4	4	8	8
Number of terminals	66	66	66	66	66	66	66	66
word count	16777216 words	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words	16777216 words	16777216 words
character code	16000000	32000000	32000000	32000000	32000000	32000000	16000000	16000000
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	16MX8	32MX4	32MX4	32MX4	32MX4	32MX4	16MX8	16MX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSSOP	TSSOP	TSSOP	TSSOP	TSSOP	TSSOP	TSSOP	TSSOP
Encapsulate equivalent code	TSSOP66,.46	TSSOP66,.46	TSSOP66,.46	TSSOP66,.46	TSSOP66,.46	TSSOP66,.46	TSSOP66,.46	TSSOP66,.46
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
power supply	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	4096	4096	4096	4096	4096	4096	4096
Continuous burst length	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8
Maximum standby current	0.015 A	0.015 A	0.015 A	0.015 A	0.015 A	0.015 A	0.015 A	0.02 A
Maximum slew rate	0.2 mA	0.25 mA	0.2 mA	0.23 mA	0.23 mA	0.23 mA	0.23 mA	0.25 mA
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maker	-	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	-	-

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