NE522
High−Speed
Dual−Differential
Comparator/Sense Amp
Features
•
•
•
•
•
15 ns Maximum Guaranteed Propagation Delay
20
mA
Maximum Input Bias Current
TTL-Compatible Strobes and Outputs
Large Common-Mode Input Voltage Range
Operates from Standard Supply Voltages
14
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MARKING DIAGRAMS
SOIC−14
D SUFFIX
CASE 751A
14
NE522
AWLYWW
1
1
PDIP−14
N SUFFIX
CASE 646
Applications
•
MOS Memory Sense Amp
•
A-to-D Conversion
•
High-Speed Line Receiver
NE522N
AWLYYWW
(1)
INPUT 1A
(2)
INPUT 1B
(12)
INPUT 2A
(11)
INPUT 2B
(4)
OUTPUT 1Y
(5)
STROBE 1G
STROBE S
(6)
(9)
OUTPUT 2Y
(8)
STROBE 2G
14
1
A
WL
YY, Y
WW
= Assembly Location
= Wafer Lot
= Year
= Work Week
PIN CONNECTIONS
D, N Packages
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Figure 1. Block Diagram
INPUT 1A
INPUT 1B
NC
OUTPUT 1Y
V+
V−
INPUT 2A
INPUT 2B
NC
OUTPUT 2Y
STROBE 2G
LOGIC FUNCTION TABLE
V
ID
(A
+
, B
−
)
< −V
OS
−V
OS
< V
ID
< V
OS
> V
OS
X
X
STRS
H
H
H
L
X
STRG
H
H
H
X
L
Output
Transistor
ON
Undefined
OFF
OFF
OFF
STROBE 1G
STROBE S
GROUND
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2004
1
June, 2004 − Rev. 0
Publication Order Number:
NE522/D
NE522
V+
14
R
2
R
1
Q
4
−
+
Q
9
R
4
13
V
R
8
Q
16
12
11
+
−
Q
22
D
5
Q
20
R
12
13
V−
R
11
Q
21
R
19
R
26
R
18
Q
23
8
Q
24
Q
32
Q
31
R
27
9
R
10
Q
18
Q
17
Q
10
Q
8
Q
13
R
3
R
7
Q
19
Q
11
R
14
D
2
D
1
D
7
Q
3
R
16
2
1
Q
2
Q
2
D
6
Q
6
Q
5
5
Q
25
6
Q
28
R
2
Q
26
4
R
17
R
20
R
21
R
5
R
15
R
6
7
R
9
D
3
R
28
Q
35
Q
15
Q
14
D
4
Figure 2. Equivalent Schematic
MAXIMUM RATINGS
Rating
Single Supply Voltage
Positive
Negative
Differential Input Voltage
Input Voltage
Common-Mode
Strobe/Gate
Power Dissipation
Thermal Resistance, Junction−to−Ambient
N Package
D Package
Operating Temperature Range
Operating Junction Temperature
Storage Temperature Range
Lead Soldering Temperature (10 sec max)
Symbol
V+
V−
V
IDR
V
IN
Value
+7.0
−7.0
"6.0
"5.0
+5.25
600
100
145
0 to 70
150
−65 to +150
+230
°C
°C
°C
°C
V
V
Unit
V
P
D
R
qJA
mW
°C/W
T
amb
T
J
T
stg
T
sld
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values
(not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage
may occur and reliability may be affected.
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2
NE522
DC ELECTRICAL CHARACTERISTICS
(V" =
"5.0
V
"5%;
T
amb
= 0
°C
to +70
°C,
unless otherwise noted.)
Characteristic
Input Offset Voltage
At 25°C
Overtemperature Range
Input Bias Current
At 25°C
Overtemperature Range
Input Offset Current
At 25°C
Overtemperature Range
Common-Mode Voltage Range
LOW-Level Input Voltage
At 25°C
Overtemperature Range
High Level Temperature
HIGH-Level Input Current
1G or 2G Strobe
Common Strobe S
LOW-Level Input Current
1G or 2G Strobe
Common Strobe S
LOW-Level Output Voltage
HIGH-Level Output Current
Supply Voltage
Positive
Negative
Supply Current
Positive
Negative
Symbol
V
OS
Test Conditions
V + = +4.75 V; V − = −4.75 V
−
−
I
BIAS
V + = +5.25 V; V − = −5.25 V
−
−
I
OS
V + = +5.25 V; V − = −5.25 V
−
−
V
CM
V
IL
V + = +4.75 V; V − = −4.75 V
−
−
−
V
IH
I
IH
−
V + = +5.25 V; V − = −5.25 V;
V
IH
= 2.7 V
V
IL
= 0.5 V
−
−
V
OL
I
OH
V + = +5.25 V; V − = −5.25 V;
V
I(S)
= 2.0 V; I
LOAD
= 20 mA
V + = +4.75 V; V − = −4.75 V;
V
OH
= 5.25 V
−
V+
V−
I
CC+
I
CC−
V + = +5.25 V; V − = −5.25 V;
T
amb
= 25°C
4.75
−4.75
−
−
5.0
−5.0
27
−15
5.25
−5.25
mA
35
−28
−
−
−
−
−
−
−2.0
−4.0
0.5
250
V
mA
V
2.0
−
−
−
−
−
−
−
0.8
0.7
−
50
100
mA
V
mA
−3.0
1.0
−
−
5.0
12
+3.0
V
V
7.5
−
20
40
mA
6.0
−
7.5
10
mA
Min
Typ
Max
Unit
mV
I
IL
AC ELECTRICAL CHARACTERISTICS
(T
amb
= 25°C; R
L
= 280
W;
C
L
= 15 pF, unless otherwise noted.)
Characteristic
Input Resistance
Input Capacitance
Large−signal switching speed
Propagation Delay
Low to High (Note 1)
High to Low (Note 1)
Low to High (Note 2)
High to Low (Note 2)
Maximum Operating Frequency
ns
t
PLH(D)
t
PHL(D)
t
PLH(S)
t
PHL(S)
I
MAX
Amp
Amp
Strobe
Strobe
−
Output
Output
Output
Output
−
−
−
−
−
25
10
8.0
6.0
5.0
35
15
12
13
9.0
−
MHz
Symbol
I
R
I
C
From Input
−
−
To Output
−
−
Min
−
−
Typ
4.0
3.0
Max
−
−
Unit
kW
pF
1. Response time measured from 0 V point of +100 mV
P-P
10 MHz square wave to the 1.5 V point of the output.
2. Response time measured from 1.5 V point of the input to 1.5 V point of the output.
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3
NE522
TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
4
3
2
1
0
20mV
50mV
100mV
VS = 5V
T
A
=
°C
5mV
15mV
VS = 5V
T
A
=
°C
RESPONSE TIME (ns)
3
2
1
0
100mV
50mV
5mV
10mV
24
20
16
12
8
4
TPD (LH)
TPD (HL)
INPUT VOLTAGE (mV)
INPUT VOLTAGE (mV)
100
50
0
0
5
10
15
TIME (ns)
20
25
100
50
0
0
5
10
15
20
25
−60
TIME (ns)
−20
+20
+60
+100
AMBIENT TEMPERATURE (°C)
Figure 3. Response Time for
Various Input Overdrives
Figure 4. Response Time for
Various Input Overdrives
Figure 5. Response Time
vs. Temperature
24
VS = 5V
10MN SQUARE WAVE INPUT
PROPAGATION DELAY (ns)
PROPAGATION DELAY (ns)
20
T
A
=
°C
18
16
14
12
10
8
6
4
2
V = 5V
10MHz SQ WAVE
T
A
=
°C
12
INPUT BIAS CURRENT (
µ
A)
11
16
TPD (LH)
12
10
9
8
7
6
TPD (LH)
8
TPD (HL)
TPD (HL)
4
10
20
30
40
50
60
70
100
200
500
1000
2000
−75
−25
+25
+75
+125
INPUT VOLTAGE (mV
P-P
)
INPUT VOLTAGE (mV
P-P
)
AMBIENT TEMPERATURE (°C)
Figure 6. Propagation Delay
for Various Input Voltages
Figure 7. Propagation Delay
for Various Input Voltages
Figure 8. Input Bias Current
vs. Ambient Temperature
1.1
INPUT OFFSET CURRENT (
µ
A)
1.0
0.9
0.8
0.7
0.6
0.5
−75
−25
+25
+75
+125
AMBIENT TEMPERATURE (°C)
Figure 9. Input Offset Current
vs. Ambient Temperature
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4
NE522
ORDERING INFORMATION
Device
NE522D
NE522DR2
NE522N
Description
14−Pin Plastic SO
14−Pin Plastic SO
14−Pin Plastic DIP
Temperature Range
0 to +70°C
0 to +70°C
0 to +70°C
Shipping†
55 Units/Rail
2500 Tape & Reel
25 Units/Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
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5
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