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NCE0160G
NCE N-Channel
Enhancement Mode Power MOSFET
Description
The NCE0160G uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge.
This device is suitable for use in PWM, load switching and
general purpose applications.
General Features
●
V
DS
= 100V,I
D
=60A
R
DS(ON)
<16mΩ @ V
GS
=12.6V
●
Special designed for convertors and power controls
●
High density cell design for ultra low Rdson
●
Fully characterized Avalanche voltage and current
●
Good stability and uniformity with high E
AS
●
Excellent package for good heat dissipation
Marking and pin assignment
Schematic diagram
Application
●
Power switching application
●
Hard switched and high frequency circuits
●
Uninterruptible power supply
100% UIS TESTED!
DFN5X6-8L top view
100%
ΔVds
TESTED!
Package Marking and Ordering Information
Device Marking
NCE0160G
Device
NCE0160G
Device Package
DFN5X6-8L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T
C
=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(T
C
=70℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy
(Note 5)
Operating Junction and Storage Temperature Range
E
AS
Symbol
V
DS
V
GS
I
D
I
D
(70℃)
Limit
100
±20
60
50
80
105
0.70
550
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
℃
I
DM
P
D
T
J
,T
STG
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Thermal Characteristic
Thermal Resistance,Junction-to- Case
(Note 2)
R
θJc
NCE0160G
1.43
℃
/W
Electrical Characteristics (T
C
=25
℃
unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
(Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
Diode Forward Current
(Note 2)
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
C
lss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
I
S
t
rr
Qrr
t
on
Condition
V
GS
=0V I
D
=250μA
V
DS
=100V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=30A
V
DS
=15V,I
D
=10A
Min
100
-
-
2.5
-
-
-
-
-
-
Typ
110
-
-
3.7
12.6
30
2850
220
90
17
10
26
10
47
13
12.5
-
-
-
-
Max
-
1
±100
4.5
16
-
-
-
-
-
-
-
-
-
--
-
1.2
60
60
200
Unit
V
μA
nA
V
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
nS
nC
V
DS
=50V,V
GS
=0V,
F=1.0MHz
V
DD
=30V,I
D
=5A,R
L
=10Ω
V
GS
=10V,R
G
=1Ω
-
-
-
-
-
-
-
-
-
-
V
DS
=50V,I
D
=10A,
V
GS
=10V
V
GS
=0V,I
S
=4A
TJ = 25°C, IF = 10A
di/dt = 100A/μs
(Note3)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
5.
EAS condition：Tj=25℃,V
DD
=50V,V
G
=10V,L=0.5mH,Rg=25Ω
Wuxi NCE Power Semiconductor Co., Ltd
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NCE0160G
Test Circuit
1）E
AS
test Circuit
2）Gate charge test Circuit
3）Switch Time Test Circuit
Wuxi NCE Power Semiconductor Co., Ltd
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NCE0160G
Typical Electrical and Thermal Characteristics (Curves)
Figure1. Safe operating area
Figure2. Source-Drain Diode Forward Voltage
Figure3. Output characteristics
Figure4. Transfer characteristics
Figure5. Static drain-source on resistance
Figure6. R
DS(ON)
vs Junction Temperature
Wuxi NCE Power Semiconductor Co., Ltd
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Figure7. BV
DSS
vs Junction Temperature
NCE0160G
Figure8. V
GS(th)
vs Junction Temperature
Figure9. Gate charge waveforms
Figure10. Capacitance
Figure11. Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
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