75 A, 50 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | ON Semiconductor |
| package instruction | CASE 418B-03, D2PAK-3 |
| Contacts | 3 |
| Manufacturer packaging code | CASE 418B-03 |
| Reach Compliance Code | _compli |
| ECCN code | EAR99 |
| Other features | AVALANCHE RATED |
| Avalanche Energy Efficiency Rating (Eas) | 500 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 50 V |
| Maximum drain current (Abs) (ID) | 75 A |
| Maximum drain current (ID) | 75 A |
| Maximum drain-source on-resistance | 0.0095 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSSO-G2 |
| JESD-609 code | e0 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 125 W |
| Maximum pulsed drain current (IDM) | 225 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| MTB75N05HD | MTB75N05HDT4 | |
|---|---|---|
| Description | 75 A, 50 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET | 75 A, 50 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET |
| Is it Rohs certified? | incompatible | incompatible |
| Maker | ON Semiconductor | ON Semiconductor |
| package instruction | CASE 418B-03, D2PAK-3 | CASE 418B-03, D2PAK-3 |
| Contacts | 3 | 3 |
| Manufacturer packaging code | CASE 418B-03 | CASE 418B-03 |
| Reach Compliance Code | _compli | _compli |
| ECCN code | EAR99 | EAR99 |
| Other features | AVALANCHE RATED | AVALANCHE RATED |
| Avalanche Energy Efficiency Rating (Eas) | 500 mJ | 500 mJ |
| Shell connection | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 50 V | 50 V |
| Maximum drain current (Abs) (ID) | 75 A | 75 A |
| Maximum drain current (ID) | 75 A | 75 A |
| Maximum drain-source on-resistance | 0.0095 Ω | 0.0095 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSSO-G2 | R-PSSO-G2 |
| JESD-609 code | e0 | e0 |
| Humidity sensitivity level | 1 | 1 |
| Number of components | 1 | 1 |
| Number of terminals | 2 | 2 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 125 W | 125 W |
| Maximum pulsed drain current (IDM) | 225 A | 225 A |
| Certification status | Not Qualified | Not Qualified |
| surface mount | YES | YES |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING | GULL WING |
| Terminal location | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD