MSDM100-16 datasheet, PDF - EEWORLD Datasheet

MSDM100-16: Description3 PHASE, 100 A, 1600 V, SILICON, BRIDGE RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size134KB，4 Pages; ManufacturerETC2

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3 PHASE, 100 A, 1600 V, SILICON, BRIDGE RECTIFIER DIODE

Parameter Name	Attribute value
Number of terminals	5
Number of components	6
Minimum breakdown voltage	1600 V
Maximum average input current	100 A
Processing package description	CASE M2-1, 5 PIN
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	FLANGE MOUNT
Terminal form	UNSPECIFIED
Terminal location	UPPER
Packaging Materials	UNSPECIFIED
structure	BRIDGE, 6 ELEMENTS
Shell connection	ISOLATED
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Phase	3
Maximum repetitive peak reverse voltage	1600 V
Maximum non-repetitive peak forward current	920 A

	MSDM100-16	MSDM100	MSDM100-08	MSDM100-12	MSDM100-18
Description	3 PHASE, 100 A, 1600 V, SILICON, BRIDGE RECTIFIER DIODE	3 PHASE, 100 A, 1600 V, SILICON, BRIDGE RECTIFIER DIODE	3 PHASE, 100 A, 1600 V, SILICON, BRIDGE RECTIFIER DIODE	3 PHASE, 100 A, 1600 V, SILICON, BRIDGE RECTIFIER DIODE	3 PHASE, 100 A, 1600 V, SILICON, BRIDGE RECTIFIER DIODE
Number of terminals	5	5	5	5	5
Number of components	6	6	6	6	6
Minimum breakdown voltage	1600 V	1600 V	1600 V	1600 V	1600 V
Maximum average input current	100 A	100 A	100 A	100 A	100 A
Processing package description	CASE M2-1, 5 PIN	CASE M2-1, 5 PIN	CASE M2-1, 5 PIN	CASE M2-1, 5 PIN	CASE M2-1, 5 PIN
state	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE
packaging shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package Size	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Terminal form	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Terminal location	UPPER	UPPER	UPPER	UPPER	UPPER
Packaging Materials	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
structure	BRIDGE, 6 ELEMENTS	BRIDGE, 6 ELEMENTS	BRIDGE, 6 ELEMENTS	BRIDGE, 6 ELEMENTS	BRIDGE, 6 ELEMENTS
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Phase	3	3	3	3	3
Maximum repetitive peak reverse voltage	1600 V	1600 V	1600 V	1600 V	1600 V
Maximum non-repetitive peak forward current	920 A	920 A	920 A	920 A	920 A

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