Cree
®
EZ700™ Gen II LED
Data Sheet
CxxxEZ700-Sxx000-2
Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary optical design and device technology to deliver superior value for high-intensity LEDs. The
optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these
LEDs are die attachable with conductive epoxy, solder paste or solder preforms, in addition to using the flux eutectic
method. These vertically structured, low forward voltage LED chips are approximately 170 microns in height. Cree’s
EZ™ chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of
applications, such as general illumination, automotive lighting and LCD backlighting.
FEATURES
•
EZBright Power Chip LED Rf Performance
− 240 mW min. - 450 & 460 nm
− 200 mW min. - 470 nm
− 90 mW min. - 527 nm
•
•
•
•
•
Lambertian Radiation
Conductive Epoxy, Solder Paste or Preforms,
or Flux Eutectic Attach
Low Forward Voltage – 3.6 V Typical at 350
mA
Single Wire Bond Structure
Dielectric Passivation Across Epi Surface
APPLICATIONS
•
General Illumination
–
–
–
–
–
•
•
•
•
Aircraft
Decorative Lighting
Task Lighting
Outdoor Illumination
Projection Lighting
White LEDs
Crosswalk Signals
Backlighting
Automotive
CxxxEZ700-Sxx000-2 Chip Diagram
Top View
EZBright LED Chip
680 x 680 µm
Backside
Metallization
Gold Bond Pad
150 x 150 µm
Bottom View
Die Cross Section
v. B
CPR3DW Re
Data Sheet:
Cathode (-)
t = 170 µm
Dielectric Passivation
Anode (+);
3 µm AuSn
Subject to change without notice.
www.cree.com
1
Maximum Ratings at T
A
= 25°C
Note 1
DC Forward Current
Peak Forward Current
LED Junction Temperature
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Typical Electrical/Optical Characteristics at T
A
= 25°C, If = 350 mA
Part Number
Forward Voltage (V
f
, V)
Min.
C450EZ700-Sxx000-2
C460EZ700-Sxx000-2
C470EZ700-Sxx000-2
C527EZ700-Sxx000-2
Mechanical Specifications
Description
P-N Junction Area (μm)
Chip Area (μm)
Chip Thickness (μm)
Top Au Bond Pad (μm)
Au Bond Pad Thickness (μm)
Back Contact Metal Area (μm)
Back Contact Metal Thickness (μm)
3.0
3.0
3.0
3.1
Typ.
3.5
3.5
3.5
3.5
Max.
3.9
3.9
3.9
4.0
Note 2
CxxxEZ700-Sxx000-2
750 mA
1000 mA
Note 3
145°C
5 V
-40°C to +100°C
-40°C to +120°C
Reverse Current
[I(Vr=5 V), μA]
Max.
2
2
2
2
Full Width Half Max
(λ
D
, nm)
Typ.
20
21
22
35
CxxxEZ700-Sxx000-2
Dimension
650 x 650
680 x 680
170
150 x 150
3.0
680 x 680
3.0
Tolerance
±35
±35
±25
±25
±1.5
±35
±1.5
Notes:
1. Maximum ratings are package-dependent. The above ratings were determined using a Au-plated TO39 header without an
encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a
specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See Cree
EZBright Applications Note for assembly-process information.
2. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 350 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values
given are within the range of average expected by the manufacturer in large quantities and are provided for information only.
All measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics measured in an
integrating sphere using Illuminance E.
3. This peak forward current specification is based on a 400-ms pulse width at a 1/5-duty cycle with a junction temperature of
65°C.
Copyright © 2008-2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks, and EZBright, EZ, and EZ700 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
2
CPR3DW Rev. B
Standard Bins for CxxxEZ700-Sxx000-2
LED chips are sorted to the
radiant flux
and
dominant wavelength
bins shown. A sorted die sheet contains die
from only one bin. Sorted die kit (CxxxEZ700-Sxx000-2) orders may be filled with any or all bins (CxxxEZ700-0xxx-2)
contained in the kit. All radiant flux and all dominant wavelength values shown and specified are at If = 350 mA. Radiant
flux values are measured using Au-plated TO39 headers without an encapsulant.
C450EZ700-S24000-2
Radiant Flux
C450EZ700-0313-2
C450EZ700-0314-2
C450EZ700-0310-2
C450EZ700-0306-2
C450EZ700-0315-2
C450EZ700-0311-2
C450EZ700-0307-2
C450EZ700-0316-2
C450EZ700-0312-2
C450EZ700-0308-2
310 mW
C450EZ700-0309-2
280 mW
C450EZ700-0305-2
240 mW
445 nm
447.5 nm
450 nm
Dominant Wavelength
C460EZ700-S24000-2
452.5 nm
455 nm
Radiant Flux
C460EZ700-0313-2
C460EZ700-0314-2
C460EZ700-0310-2
C460EZ700-0306-2
C460EZ700-0315-2
C460EZ700-0311-2
C460EZ700-0307-2
C460EZ700-0316-2
C460EZ700-0312-2
C460EZ700-0308-2
310 mW
C460EZ700-0309-2
280 mW
C460EZ700-0305-2
240 mW
455 nm
457.5 nm
460 nm
Dominant Wavelength
C470EZ700-S20000-2
462.5 nm
465 nm
Radiant Flux
C470EZ700-0309-2
C470EZ700-0310-2
C470EZ700-0306-2
C470EZ700-0302-2
C470EZ700-0311-2
C470EZ700-0307-2
C470EZ700-0303-2
C470EZ700-0312-2
C470EZ700-0308-2
C470EZ700-0304-2
280 mW
C470EZ700-0305-2
240 mW
C470EZ700-0301-2
200 mW
465 nm
467.5 nm
470 nm
Dominant Wavelength
C527EZ700-Sxx00-2
472.5 nm
475 nm
C527EZ700-0210-2
C527EZ700-0211-2
C527EZ700-0208-2
C527EZ700-0205-2
C527EZ700-0202-2
C527EZ700-0212-2
C527EZ700-0209-2
C527EZ700-0206-2
C527EZ700-0203-2
Radiant Flux
150 mW
C527EZ700-0207-2
130 mW
110 mW
C527EZ700-0204-2
C527EZ700-0201-2
90 mW
520 nm
525 nm
530 nm
Dominant Wavelength
535 nm
Copyright © 2008-2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks, and EZBright, EZ, and EZ700 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
3
CPR3DW Rev. B
Characteristic Curves
These are representative measurements for the EZBright Power Chip LED product. Actual curves will vary slightly for the
various radiant flux and dominant wavelength bins.
Forward Current vs. Forward Voltage
500
VoltageShift (nm)
DW Shift (V)
400
If (mA)
300
200
100
0
0
1
2
Vf (V)
3
4
5
6
0.100
5
0.000
4
-0.100
3
Dominant Wavelength Shift vs. Junction Temperature
Voltage Shift vs. Junction Temperature
2
-0.200
1
-0.300
0
-0.400
-1
-0.500
-2
-0.600
25
25
50
50
75
100
125
75
100
125
Junction Temperature (°C)
Junction Temperature (°C)
150
150
Relative Intensity vs. Forward Current
200%
Relative Intensity
Relative Intensity
Relative Light Intensity vs. Junction Temperature
110%
105%
175%
Relative Intensity
0
50 100 150 200 250 300 350 400 450 500 550 600 650 700 750
If (mA)
150%
125%
100%
100%
95%
90%
85%
80%
75%
70%
75%
50%
25%
0%
65%
25
50
75
100
125
150
Junction Temperature (°C)
Wavelength Shift vs. Forward Current
16
12
DW Shift (nm)
DW Shift (nm)
4
0
-4
-8
Dominant Wavelength Shift vs. Junction Temperature
6
5
DW Shift (nm)
4
3
2
1
0
-1
8
-12
-16
0
50 100 150 200 250 300 350 400 450 500 550 600 650 700 750
If (mA)
-2
25
50
75
100
125
150
Junction Temperature (°C)
Relative Light Intensity vs. Junction Temperature
110%
105%
Relative Intensity
100%
Copyright © 2008-2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
90%
and the Cree logo are registered trademarks, and EZBright, EZ, and EZ700 are trademarks of Cree, Inc.
95%
85%
80%
75%
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
4
CPR3DW Rev. B
Radiation Pattern
This is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for
each chip.
Copyright © 2008-2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks, and EZBright, EZ, and EZ700 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
5
CPR3DW Rev. B
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