The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 18 March 2009.
INCH-POUND
MIL-PRF-19500/528B
18 December 2008
SUPERSEDING
MIL-PRF-19500/528A
23 July 1999
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN,
SILICON, POWER,
TYPES 2N6032 AND 2N6033,
JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors. Three
levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (similar to TO-3).
* 1.3 Maximum ratings.
Types
P
T
(1)
T
C
= +25C
W
2N6032
2N6033
140
140
R
JC
C/W
1.25
1.25
V
CBO
V
CEO
V
EBO
I
B
I
C
T
J
and T
STG
C
-65 to +200
-65 to +200
V dc
120
150
V dc
90
120
V dc
7.0
7.0
A dc
10
10
A dc
50
40
(1) Between T
C
= +25C and T
C
= +200C, linear derating factor (average) = 800 mW/C.
1.4 Primary electrical characteristics at T
A
= +25C.
h
FE1
Types
C
obo
.1 MHz
f
1 MHz
I
E
= 0 A dc
V
CB
= 10 V dc
pF
Min
Max
|h
fe
|
f = 5 MHz
I
C
= 2.0 A dc
V
CE
= 10 V dc
I
C
= 50 A dc
V
CE
= 2.6 V dc
I
C
= 40 A dc
V
CE
= 2.0 V dc
Min
Max
Min
Max
Min
Max
2N6032
2N6033
10
50
10
50
1,000
1,000
10
10
40
40
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil.
Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at
http://assist.daps.dla.mil/.
AMSC N/A
FSC 5961
MIL-PRF-19500/528B
1.4 Primary electrical characteristics at T
A
= +25C - Continued.
V
BE(sat)
I
C
= 50 A dc
I
B
= 5 A dc
Type
V dc
Min
Max
Min
V dc
Max
Min
V dc
Max
Min
V
CE(sat)
I
C
= 50 A dc
I
B
= 5 A dc
I
C
= 40 A dc
I
B
= 4 A dc
t
on
switching
t
off
(see table I and figure 4)
s
Max
Min
Max
2N6032
2N6033
2.0
1.3
1.0
0.5
0.5
2.0
2.0
2. APPLICABLE DOCUMENTS
* 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
* 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
* DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
-
Semiconductor Devices, General Specification for.
* DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
-
Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at
http://assist.daps.dla.mil/quicksearch/
or
http://assist.daps.dla.mil/
or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/528B
Dimensions
Ltr
Inches
Min
Max
.875
.250
.450
.495
.525
.131
.188
.050
.135
.050
.061
.161
1.197
.440
.225
.675
Millimeters
Min
Max
22.22
6.35
11.43
12.57
13.34
3.33
4.78
1.27
3.43
1.27
1.55
4.09
30.40
11.18
5.72
17.14
Notes
CD
CH
HR
HR
1
HT
L
1
LD
LL
MHD
MHS
PS
PS
1
S
1
3
5, 9
5, 9
5
7
4
4, 5
4
.059
.312
.151
1.177
.420
.205
.655
1.50
7.92
3.84
29.90
10.67
5.21
16.64
NOTES:
1. Dimensions are in inches.
* 2. Millimeters are given for general information only.
3. Body contour is optional within zone defined by CD.
4. These dimensions shall be measured at points .050 (1.27 mm) to .055 (1.40 mm) below seating plane. When
gauge is not
used, measurement shall be made at seating plane.
5. Both terminals.
6. At both ends.
7. Two holes.
8. Terminal 1 is the emitter, terminal 2 is base. The collector shall be electrically connected to the case.
* 9. LD applies between L
1
and LL. Lead diameter shall not exceed twice LD within L
1
.
10. In accordance with ASME Y14.5M, diameters are equivalent to
x
symbology.
* FIGURE 1. Physical dimensions (similar to TO-3).
3
MIL-PRF-19500/528B
3. REQUIREMENTS
* 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
* 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
* 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
* 3.4 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be
as specified in MIL-PRF-19500 and figure 1 herein.
3.4.1 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500.
3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in paragraph 1.3, 1.4, and table I.
* 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
* 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
* c. Conformance inspection (see 4.4 and tables I and II).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500.
* 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not request the performance of
table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on
the first inspection lot of this revision to maintain qualification.
4
MIL-PRF-19500/528B
* 4.3 Screening (JANTX and JANTXV levels only). Screening shall be in accordance with MIL-PRF-19500 (table E-
IV), and as specified herein. The following measurements shall be made in accordance with table I herein. Devices
that exceed the limits of table I herein shall not be acceptable.
Screen (see table E-IV
of MIL-PRF-19500)
(1) 3c
9
10
11
Measurement
JANTX and JANTXV levels
Thermal impedance, see 4.3.2
Not applicable
24 hours minimum
I
CEX1
, h
FE1
12
See 4.3.1; 168 hours minimum
(1)
Subgroup 2 of table I herein;
I
CEX1
=
100%
of initial value or 20
A
dc
, whichever is greater;
h
FE1
= +25%
Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in
screening requirements.
13
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: T
J
= +187.5C
12.5C,
T
A
+35C.
JANTX and JANTXV levels
2N6032 ------------------------------------V
CB
= 60 V dc.
2N6033 ------------------------------------V
CB
= 100 V dc.
* 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method
3131 of MIL-STD-750 using the guidelines in that method for determining I
M
, I
H
, t
H
, t
SW
, (and V
H
where appropriate).
See table II, group E, subgroup 4 herein.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I
herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical
measurements (end-points) shall be in accordance with table I, subgroup 2 herein.
* 4.4.2.1 Group B inspection, table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup Method
B3
1037
Condition
For solder die attach: VCB
10 V dc, 2,000 cycles, T
A
+35C.
For eutectic die attach: VCB
10 V dc, T
A
+35C, adjust P
T
to achieve T
J
= +175C min.
5
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