ZXMN6A08E6
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
ADVANCE INFORMATION
V
(BR)DSS
60V
R
DS(ON)
80mΩ @ V
GS
=10V
150mΩ @ V
GS
=4.5V
I
D
T
A
= +25°C
3.5A
2.5A
Features and Benefits
Low On-Resistance
Fast Switching Speed
Low Gate Drive
Low Threshold
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This MOSFET is designed to minimize the on-state resistance and yet
maintain superior switching performance, making it ideal for high
efficiency power management applications.
Mechanical Data
Case: SOT26
Case Material: Molded Plastic; UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.018 grams (Approximate)
Applications
DC-DC Converters
Power Management Functions
Disconnect Switches
Motor Control
SOT26
D
G
S
Top View
Pin Out - Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
ZXMN6A08E6TA
ZXMN6A08E6TC
Notes:
Compliance
Standard
Standard
Case
SOT26
SOT26
Packaging
3,000 / Tape & Reel
10,000 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT26
6A8
6A8 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
̅
M or M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2015
C
Jan
1
Feb
2
2016
D
Mar
3
YM
2017
E
Apr
4
May
5
2018
F
Jun
6
2019
G
Jul
7
Aug
8
2020
H
Sep
9
2021
I
Oct
O
Nov
N
2022
J
Dec
D
March 2015
© Diodes Incorporated
ZXMN6A08E6
Document Number DS33376 Rev. 8 - 2
1 of 8
www.diodes.com
ZXMN6A08E6
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
V
DSS
V
GS
(Note 6)
Continuous Drain Current
Pulsed Drain Current
V
GS
= 10V
V
GS
= 10V
T
A
= +70°C (Note 6)
(Note 5)
(Note 7)
(Note 6)
(Note 7)
I
DM
I
S
I
SM
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
I
D
Value
60
20
3.5
2.8
2.8
16
2.6
16
A
A
A
A
Unit
V
V
ADVANCE INFORMATION
Drain-Source Voltage
Gate-Source Voltage
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Linear Derating Factor
(Note 5)
P
D
(Note 6)
(Note 5)
(Note 6)
R
θJA
T
J
, T
STG
Symbol
Value
1.1
8.8
1.7
13.6
113
73
-55 to +150
Unit
W
mW/°C
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
°C/W
°C
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Same as Note 5, except the device is measured at t
10 sec.
7. Same as Note 5, except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
ZXMN6A08E6
Document Number DS33376 Rev. 8 - 2
2 of 8
www.diodes.com
March 2015
© Diodes Incorporated
ZXMN6A08E6
Thermal Characteristics
ADVANCE INFORMATION
Max Power Dissipation (W)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20
40
60
80
100 120 140 160
25mm x 25mm
1oz FR4
I
D
Drain Current (A)
10
R
DS(on)
Limited
1
DC
1s
100ms
10ms
Single Pulse
T
amb
=25°C
1ms
100µs
100m
10m
100m
1
10
V
DS
Drain-Source Voltage (V)
Temperature (°C)
Safe Operating Area
Thermal Resistance (°C/W)
120
100
80
60
40
D=0.2
Single Pulse
D=0.05
D=0.1
D=0.5
T
amb
=25°C
Derating Curve
Maximum Power (W)
100
Single Pulse
T
amb
=25°C
10
20
100µ
1m
10m 100m
1
1
100µ
1m
10m 100m
1
10
100
1k
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ZXMN6A08E6
Document Number DS33376 Rev. 8 - 2
3 of 8
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March 2015
© Diodes Incorporated
ZXMN6A08E6
Electrical Characteristics
ADVANCE INFORMATION
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Notes 8 & 9)
Diode Forward Voltage (Note 8)
Reverse Recovery Time (Note 9)
Reverse Recovery Charge (Note 9)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 10)
Total Gate Charge (Note 10)
Gate-Source Charge (Note 10)
Gate-Drain Charge (Note 10)
Turn-On Delay Time (Note 10)
Turn-On Rise Time (Note 10)
Turn-Off Delay Time (Note 10)
Turn-Off Fall Time (Note 10)
Notes:
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
fs
V
SD
t
rr
Q
rr
C
iss
C
oss
C
rss
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
60
1.0
Typ
0.067
0.100
6.6
0.88
19.2
30.3
459
44.2
24.1
3.7
5.8
1.4
1.9
2.6
2.1
12.3
4.6
Max
0.5
100
0.080
0.150
1.2
Unit
V
µA
nA
V
Ω
S
V
ns
nC
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
V
DD
= 30V, V
GS
= 10V
I
D
= 1.5A, R
G
6.0Ω
V
GS
= 10V
V
GS
= 4.5V
V
DS
= 30V
I
D
= 1.4A
V
DS
= 40V, V
GS
= 0V
f = 1MHz
Test Condition
I
D
= 250µA, V
GS
= 0V
V
DS
= 60V, V
GS
= 0V
V
GS
=
20V,
V
DS
= 0V
I
D
= 250µA, V
DS
= V
GS
V
GS
= 10V, I
D
= 4.8A
V
GS
= 4.5V, I
D
= 4.2A
V
DS
= 15V, I
D
= 4.8A
I
S
= 4A, V
GS
= 0V, T
J
= +25°C
I
F
= 1.4A, di/dt = 100A/µs,
T
J
= +25°C
8. Measured under pulsed conditions. Pulse width
300µs; duty cycle
2%.
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.
ZXMN6A08E6
Document Number DS33376 Rev. 8 - 2
4 of 8
www.diodes.com
March 2015
© Diodes Incorporated
ZXMN6A08E6
Typical Characteristics
ADVANCE INFORMATION
I
D
Drain Current (A)
I
D
Drain Current (A)
10
T = 25°C
10V
5V
4.5V
4V
10
T = 150°C
10V
5V
4V
3.5V
1
3.5V
1
3V
2.5V
0.1
3V
V
GS
2V
0.1
0.1
1
10
V
GS
0.01
0.1
V
DS
Drain-Source Voltage (V)
V
DS
Drain-Source Voltage (V)
1
10
Output Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
Output Characteristics
and V
GS(th)
Normalised R
DS(on)
10
V
DS
= 10V
T = 150°C
V
GS
= 10V
I
D
= 4.8A
R
DS(on)
I
D
Drain Current (A)
1
T = 25°C
V
GS(th)
V
GS
= V
DS
I
D
= 250uA
0.1
0.01
2
3
4
5
0
50
100
150
V
GS
Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
R
DS(on)
Drain-Source On-Resistance
3V
3.5V
4V
Normalised Curves v Temperature
I
SD
Reverse Drain Current (A)
4.5V
10
T = 150°C
1
T = 25°C
V
GS
1
T = 25°C
5V
0.1
V
GS
= 0V
0.1
0.1
1
10
7V
10V
I
D
Drain Current (A)
0.01
0.2
0.4
0.6
0.8
1.0
1.2
On-Resistance v Drain Current
V
SD
Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
ZXMN6A08E6
Document Number DS33376 Rev. 8 - 2
5 of 8
www.diodes.com
March 2015
© Diodes Incorporated
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