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TIP145T

Description
Silicon PNP Darlington Power Transistor
CategoryDiscrete semiconductor    The transistor   
File Size82KB,3 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
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TIP145T Overview

Silicon PNP Darlington Power Transistor

TIP145T Parametric

Parameter NameAttribute value
Reach Compliance Codeunknow
Base Number Matches1
Lpioducti, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
TIP145T/146T/147T
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
• High DC Current Gain : h
FE
= 1000@ V
CE
= - 4V, l
c
= - 5A (Min.)
Industrial Use
Complement to TIP140T/141T/142T
!
1-Base
TO-220
2.Collector
3.Emitter
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Equivalent Circuit
Symbol
V
CBO
Parameter
Collector-Base Voltage
Value
: TIP145T
: TIP146T
:TIP147T
VCEO
VEBO
lc
ICP
IB
PC
Tj
Collector-Emitter Voltage : TIP145T
:TIP146T
:TIP147T
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
-60
-80
-100
-60
'-80
-100
-5
-10
-15
Units
V
V
V
V
V
V
V
A
A
A
W
-0.5
80
150
TSTG
-65-150
°c
°c
Min.
-60
-80
Electrical Characteristics
T
r
=25°C unless otherwise noted
Symbol
VCEO(SUS)
Parameter
Collector-Emitter Sustaining Voltage
: TIP145T
:TIP146T
:TIP147T
Collector Cut-off Current
:TIP145T
:TIP146T
:TIP147T
Test Condition
l
c
= - 30mA, I
B
= 0
Typ.
Max.
Units
-100
V
CE
= - 30V, I
B
= 0
V
CE
= - 40V, I
B
= 0
-2
-2
-2
-1
-1
-1
-2
1000
500
V
V
V
mA
mA
mA
mA
mA
mA
mA
ICEO
V
CE
= - sov, I
B
= o
V
CB
= - 60V, I
E
= 0
V
CB
= - SOV, I
E
= 0
V
CB
= - 100V, |E=°
V
BE
= - 5V, l
c
= 0
V
CE
= - 4V, l
c
= - 5A
V
CE
= -4V, I
C
= -10A
I
C
= - 5 A , !
B
=-10mA
I
C
= -10A, !
B
= -40mA
I
C
= -10A, I
B
=-40mA
V
CE
= -4V, I
C
= - 1 0 A
'CBO
Collector Cut-off Current
:TIP145T
: TIP146T
:TIP147T
'EBO
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Delay Time
Rise Time
Storage Time
Fall Time
hpE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
-2
-3
-3.5
-3
0.15
0.55
2.5
2.5
V
V
V
V
us
us
us
us
to
»R
1
STG
V
cc
= - 30V, l
c
= - 5A
I
B1
= -20mA, I
B2
= 20mA
R
L
- 6£i
tp
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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