K6R4016V1D-KC08 datasheet, PDF

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K6R4016V1D-KC08: DescriptionStandard SRAM, 256KX16, 8ns, CMOS, PDSO44; Categorystorage storage; File Size226KB，12 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K6R4016V1D-KC08 Overview

Standard SRAM, 256KX16, 8ns, CMOS, PDSO44

K6R4016V1D-KC08 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Objectid	1155503120
package instruction	SOJ, SOJ44,.44
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	8 ns
I/O type	COMMON
JESD-30 code	R-PDSO-J44
JESD-609 code	e1
memory density	4194304 bit
Memory IC Type	STANDARD SRAM
memory width	16
Humidity sensitivity level	3
Number of terminals	44
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOJ
Encapsulate equivalent code	SOJ44,.44
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	3.3 V
Certification status	Not Qualified
Maximum standby current	0.005 A
Minimum standby current	3 V
Maximum slew rate	0.08 mA
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	TIN SILVER COPPER
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40

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PRELIMPreliminaryPPPPPPPPPINARY

K6R4016V1D

Document Title

256Kx16 Bit High Speed Static RAM(3.3V Operating).

Operated at Commercial and Industrial Temperature Ranges.

CMOS SRAM

Revision History

Rev No.

Rev. 0.0

Rev. 0.1

Rev. 0.2

Rev. 0.3

History

Initial release with Preliminary.

Add Low Ver.

Package dimensions modify on page 11.

Change ICC , ISB, ISB1

Item

CC(Commercial)

8ns

10ns

12ns

15ns

8ns

10ns

12ns

15ns

SB1(L-ver.)

110mA

90mA

80mA

70mA

130mA

115mA

100mA

85mA

30mA

0.5mA

Current

80mA

65mA

55mA

45mA

100mA

85mA

75mA

65mA

20mA

1.2mA

Draft Data

Aug. 20. 2001

Sep. 19. 2001

Sep. 28. 2001

Oct. 09. 2001

Remark

Preliminary

CC(Industrial)

Rev. 0.4

1. Correct AC parameters : Read & Write Cycle

2. Change Data Retention Current :

from 0.45mA to 1.1mA when Vcc=3.0V

from 0.35mA to 0.9mA when Vcc=2.0V

3. Limit L-Ver. to 48 TBGA Package

1. Delete 12ns,15ns speed bin.

2. Change Icc for Industrial mode.

Item

8ns

CC(Industrial)

10ns

Nov.23. 2001

Preliminary

Rev. 1.0

Dec.18. 2001

100mA

85mA

Current

90mA

75mA

Final

Rev. 2.0

Rev. 2.1

Rev. 2.2

Rev. 2.3

Rev. 3.0

Rev. 4.0

1. Add tBA,tBLZ,tBHZ,tBW AC parematers.

1. Correct the Package dimensions(48-TBGA)

1. Add the tPU and tPD into the waveform.

1. Change the current parameters (Isb1 L-ver, Idr)

1. Add the Lead Free Package type.

1. Change the Idr parameters

Current

Idr(2V)

1.2mA

1.4mA

Idr(3V)

1.8mA

2.0mA

Feb. 14. 2002

Oct. 23. 2002

Mar. 10, 2003

June. 12, 2003

June. 20, 2003

Mar. 15, 2004

Final

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

-1-

Rev 4.0

Mar. 2004

K6R4016V1D-KC08 Related Products

	K6R4016V1D-KC08	K6R4016V1D-UC10	K6R4016V1D-UI10	K6R4016V1D-UI08	K6R4016V1D-KI08	K6R4016V1D-KI10
Description	Standard SRAM, 256KX16, 8ns, CMOS, PDSO44	Standard SRAM, 256KX16, 10ns, CMOS, PDSO44	Standard SRAM, 256KX16, 10ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44	Standard SRAM, 256KX16, 8ns, CMOS, PDSO44	Standard SRAM, 256KX16, 8ns, CMOS, PDSO44	Standard SRAM, 256KX16, 10ns, CMOS, PDSO44
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Contains lead	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
package instruction	SOJ, SOJ44,.44	TSOP, TSOP44,.46,32	0.400 INCH, LEAD FREE, TSOP2-44	TSOP, TSOP44,.46,32	SOJ, SOJ44,.44	SOJ, SOJ44,.44
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
Maximum access time	8 ns	10 ns	10 ns	8 ns	8 ns	10 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PDSO-J44	R-PDSO-G44	R-PDSO-G44	R-PDSO-G44	R-PDSO-J44	R-PDSO-J44
JESD-609 code	e1	e1	e6	e1	e1	e1
memory density	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	16	16	16	16	16	16
Humidity sensitivity level	3	3	3	3	3	3
Number of terminals	44	44	44	44	44	44
word count	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words
character code	256000	256000	256000	256000	256000	256000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-	-	-40 °C	-40 °C	-40 °C	-40 °C
organize	256KX16	256KX16	256KX16	256KX16	256KX16	256KX16
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	SOJ	TSOP	TSOP2	TSOP	SOJ	SOJ
Encapsulate equivalent code	SOJ44,.44	TSOP44,.46,32	TSOP44,.46,32	TSOP44,.46,32	SOJ44,.44	SOJ44,.44
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.005 A	0.005 A	0.005 A	0.005 A	0.005 A	0.005 A
Minimum standby current	3 V	3 V	3 V	3 V	3 V	3 V
Maximum slew rate	0.08 mA	0.065 mA	0.075 mA	0.09 mA	0.09 mA	0.075 mA
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal surface	TIN SILVER COPPER	TIN SILVER COPPER	Tin/Bismuth (Sn97Bi3)	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER
Terminal form	J BEND	GULL WING	GULL WING	GULL WING	J BEND	J BEND
Terminal pitch	1.27 mm	0.8 mm	0.8 mm	0.8 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	40	40	40	40	40	40
Objectid	1155503120	-	-	1155503126	1155503122	1155503123
ECCN code	3A991.B.2.A	-	-	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A

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