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RJK6002DJE_15

Description
600V - 2A - MOS FET High Speed Power Switching
File Size77KB,5 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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RJK6002DJE_15 Overview

600V - 2A - MOS FET High Speed Power Switching

Preliminary Datasheet
RJK6002DJE
600V - 2A - MOS FET
High Speed Power Switching
Features
Low on-resistance
R
DS(on)
= 5.7
typ. (at I
D
= 1 A, V
GS
= 10 V, Ta = 25C)
Low leakage current
High speed switching
R07DS0845EJ0100
Rev.1.00
Jul 05, 2011
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
D
G
1. Source
2. Drain
3. Gate
32
S
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel to ambient thermal impedance
Channel temperature
Storage temperature
Notes: 1. Limited by Tch max.
2. Value at Tc = 25C
3. Pulse width limited by safe operating area.
Symbol
V
DSS
V
GSS
I
D Note1
I
D (pulse)Note3
I
DR Note1
I
DR (pulse)Note3
Pch
Note2
ch-a
Tch
Tstg
Ratings
600
30
2
4
2
4
0.9
139
150
–55 to +150
Unit
V
V
A
A
A
A
W
C/W
C
C
R07DS0845EJ0100 Rev.1.00
Jul 05, 2011
Page 1 of 3

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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