71V416VS12BE datasheet, PDF - EEWORLD Datasheet

71V416VS12BE: DescriptionStandard SRAM, 256KX16, 12ns, CMOS, PBGA48; Categorystorage storage; File Size981KB，9 Pages; ManufacturerIDT (Integrated Device Technology)

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71V416VS12BE Overview

Standard SRAM, 256KX16, 12ns, CMOS, PBGA48

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	109065159
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	12 ns
I/O type	COMMON
JESD-30 code	R-PBGA-B48
memory density	4194304 bit
Memory IC Type	STANDARD SRAM
memory width	16
Number of terminals	48
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	FBGA
Encapsulate equivalent code	BGA48,6X8,30
Package shape	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH
Parallel/Serial	PARALLEL
power supply	3.3 V
Certification status	Not Qualified
Maximum standby current	0.02 A
Minimum standby current	3 V
Maximum slew rate	0.18 mA
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	BALL
Terminal pitch	0.75 mm
Terminal location	BOTTOM

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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