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IRFR15N20DTRPBF

Description
17 A, 200 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
CategoryDiscrete semiconductor    The transistor   
File Size237KB,12 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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IRFR15N20DTRPBF Overview

17 A, 200 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA

IRFR15N20DTRPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-252AA
package instructionLEAD FREE, PLASTIC, DPAK-3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)260 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (Abs) (ID)17 A
Maximum drain current (ID)17 A
Maximum drain-source on-resistance0.165 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)140 W
Maximum pulsed drain current (IDM)68 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

IRFR15N20DTRPBF Related Products

IRFR15N20DTRPBF IRFU15N20DPBF
Description 17 A, 200 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA 17 A, 200 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
Is it Rohs certified? conform to conform to
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon )
Parts packaging code TO-252AA TO-251AA
package instruction LEAD FREE, PLASTIC, DPAK-3 LEAD FREE, PLASTIC, IPAK-3
Contacts 3 3
Reach Compliance Code unknown not_compliant
ECCN code EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 260 mJ 260 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 200 V 200 V
Maximum drain current (Abs) (ID) 17 A 17 A
Maximum drain current (ID) 17 A 17 A
Maximum drain-source on-resistance 0.165 Ω 0.165 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-252AA TO-251AA
JESD-30 code R-PSSO-G2 R-PSIP-T3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 140 W 140 W
Maximum pulsed drain current (IDM) 68 A 68 A
Certification status Not Qualified Not Qualified
surface mount YES NO
Terminal surface MATTE TIN OVER NICKEL Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 30 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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