星合电子
ZMM1B...ZMM200B
SILICON PLANAR ZENER DIODES
in MiniMELF case especially for automatic insertion. The Zener
voltages are graded according to the international E 24
standard. Smaller voltage tolerances and higher Zener voltages
are upon request.
LL-34
ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ
These diodes are also available in DO-35 case with the type
designation BZX55B
Absolute Maximum Ratings (Ta = 25
o
C)
Symbol
Power Dissipation
Junction Temperature
Storage Temperature Range
1)
Value
500
1)
Unit
mW
O
P
tot
T
j
T
S
175
-55 to +175
C
C
O
Valid provided that electrodes are kept at ambient temperature
Characteristics at T
amb
= 25
o
C
Symbol
Thermal Resistance
Junction to Ambient Air
1)
Min.
-
Typ.
-
Max.
0.3
1)
Unit
K/mW
R
thA
Valid provided that electrodes are kept at ambient temperature
星合电子
ZMM1B...ZMM200B
Zener Voltage Range
1)
Type
3)
ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ
Dynamic Resistance
r
ZJT
Ω
<8
<85
<85
<85
<85
<85
<85
<85
<85
<75
<60
<35
<25
<10
<8
<7
<7
<10
<15
<20
<20
<26
<30
<40
<50
<55
<55
<80
<80
<80
<80
<80
<90
<90
<110
<125
<135
<150
<200
<250
<300
<450
<450
<600
<800
<950
<1250
<1400
<1700
<2000
Reverse Leakage Current
T
a
=25
o
C
μA
--
<100
<75
<50
<10
<4
<2
<2
<2
<1
<0.5
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
Vznom
V
0.75
2.0
2.2
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
l
ZT
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
1
1
1
1
1
1
1
1
1
for
V
ZT 2)
V
0.73…0.77
1.96…2.04
2.15…2.25
2.35…2.45
2.64…2.75
2.94…3.06
3.23…3.36
3.52…3.67
3.82…3.98
4.21…4.39
4.60…4.80
4.99…5.20
5.49…5.71
6.07…6.32
6.66…6.94
7.35…7.65
8.04…8.36
8.92…9.28
9.8…10.2
10.8…11.2
11.8…12.2
12.7…13.3
14.7…15.3
15.7…16.3
17.6…18.4
19.6…20.4
21.6…22.5
23.5…24.5
26.4…27.6
29.4…30.6
32.3…33.7
35.2…36.8
38.2…39.8
42.1…43.9
46.0…48.0
49.9…52.1
54.8…57.2
60.7…63.3
66.6…69.4
73.5…76.5
80.3…83.7
89.1…92.9
98.0…102.0
107.8…112.2
117.6…122.4
127.4…132.6
147.0…153.0
156.8…163.2
176.4…183.6
196.0…204.0
r
ZJK
at I
ZK
Ω
mA
<50
<600
<600
<600
<600
<600
<600
<600
<600
<600
<600
<550
<450
<200
<150
<50
<50
<50
<70
<70
<90
<110
<110
<170
<170
<220
<220
<220
<220
<220
<220
<220
<500
<500
<600
<700
<700
<1000
<1000
<1000
<1500
<2000
<5000
<5000
<5500
<6000
<6500
<7000
<8500
<10000
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.25
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
T
a
= 125
o
C
μA
--
<200
<160
<100
<50
<40
<40
<40
<40
<20
<10
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<5
<5
<5
<10
<10
<10
<10
<10
<10
<10
<10
<10
<10
<10
<10
<10
<10
<10
I
R
at V
R
V
--
1
1
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
Temp coefficient
of Zener Voltage
TKvz
%/K
-0.26...-0.23
-0.09...-0.06
-0.09...-0.06
-0.09...-0.06
-0.09...-0.06
-0.08...-0.05
-0.08...-0.05
-0.08...-0.05
-0.08...-0.05
-0.06...-0.03
-0.05...+0.02
-0.02...+0.02
-0.05...+0.05
0.03...0.06
0.03...0.07
0.03...0.07
0.03...0.08
0.03...0.09
0.03...0.1
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.05...0.12
0.05...0.12
0.05...0.12
0.05...0.12
0.05...0.12
0.05...0.12
0.05...0.12
0.05...0.12
0.05...0.12
0.05...0.12
ZMM 1B
ZMM 2B0
ZMM 2B2
ZMM 2B4
ZMM 2B7
ZMM 3B0
ZMM 3B3
ZMM 3B6
ZMM 3B9
ZMM 4B3
ZMM 4B7
ZMM 5B1
ZMM 5B6
ZMM 6B2
ZMM 6B8
ZMM 7B5
ZMM 8B2
ZMM 9B1
ZMM 10B
ZMM 11B
ZMM 12B
ZMM 13B
ZMM 15B
ZMM 16B
ZMM 18B
ZMM 20B
ZMM 22B
ZMM 24B
ZMM 27B
ZMM 30B
ZMM 33B
ZMM 36B
ZMM 39B
ZMM 43B
ZMM 47B
ZMM 51B
ZMM 56B
ZMM 62B
ZMM 68B
ZMM 75B
ZMM 82B
ZMM 91B
ZMM 100B
ZMM 110B
ZMM 120B
ZMM 130B
ZMM 150B
ZMM 160B
ZMM 180B
ZMM 200B
1) Tested with pulses t
p
= 20 ms.
1)
Valid provided that electrodes are kept at ambient temperature
The ZMM1 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be “F” instead of “Z”. Connect the
2)
cathode electrode to the negative pole.
星合电子
ZMM1B...ZMM200B
ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ
Breakdown characteristics
T
j
= constant (pulsed)
mA
50
ZMM3B3 ZMM3B9 ZMM4B7
Tj=25 C
ZMM1B
o
ZMM6B8
ZMM...
ZMM2B7
Iz
40
ZMM8B2
ZMM5B6
30
20
10
Test current Iz
5mA
0
0
1
2
3
4
5
6
Vz
7
8
9
10 V
Breakdown characteristics
T
j
= constant (pulsed)
mA
30
ZMM...
ZMM10B
ZMM12B
Tj=25
o
C
Iz
ZMM15B
20
ZMM18B
ZMM22B
Test current Iz
5mA
ZMM27B
ZMM33B
ZMM36B
10
0
0
10
20
Vz
30
40 V
星合电子
ZMM1B...ZMM200B
ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ
Breakdown characteristics
T
j
= constant (pulsed)
mA
10
ZMM51B
ZMM...
Tj=25
o
C
ZMM39B
Iz
8
ZMM43B
Test current Iz
5mA
6
ZMM47B
4
2
0
0
10
20
30
40
50
60
Vz
70
80
90
100 V
Forward characteristics
Admissible power dissipation
versus ambient temperature
Valid provided that electrodes are kept
at ambient temperature.
mA
10
3
ZMM...
mW
500
ZMM...
10
2
i
F
10
Tj=100 C
1
Tj=25 C
10
-1
o
o
P
tot
400
300
10
-2
200
10
-3
100
-4
10
10
-5
0
0
0.2
0.4
0.6
V
F
0.8
1V
0
100
200
o
C
T
amb
星合电子
ZMM1B...ZMM200B
ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ
Pulse thermal resistance
versus pulse duration
Valid provided that the electrodes are kept
at ambient temperature.
K/W
10
3
7
5
5
4
3
2
2
2
4
Dynamic resistance
versus Zener current
ZMM...
ZMM...
1000
T
j
=25 C
o
r
thA
r
zj
3
0.5
100
0.2
5
4
10
7
5
4
3
0.1
0.05
3
2
2
0.02
0.01
V=0
10
7
5
4
3
2
10
ZMM1B
5
4
2B7
3B6
4B7
t
p
t
p
V=
T
P
I
3
2
5B1
ZMM5B6
0.1
2
5
T
1
10
-5
10
-4
10
-3
1
1
10 S
1
2
5
10
-2
10
t
p
-1
10
2
5
100mA
Iz
Capacitance versus
Zener voltage
Dynamic resistance
versus Zener current
ZMM...
pF
1000
7
5
ZMM...
T
j
=25 C
o
100
T
j
=25 C
5
o
r
zj
V
R
=1V
4
3
C
tot
4
3
33B
2
V
R
=2V
2
27B
22B
10
100
7
5
4
3
18B
15B
12B
10B
V
R
=1V
5
4
3
V
R
=2V
2
6B8/8B2
2
ZMM6B2
1
0.1
1
2
3
4 5
2
5
10
10
2
3
4 5
1
2
5
10
2
5
100mA
100V
Iz
Vz at Iz=5 mA
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